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BUL43BAF

Onsemi

BUL43BAF by Onsemi

BUL43BAF by Onsemi is a NPN Power BJT with max. VCE of 350V and IC of 2A. With hFE of 6, it's ideal for switching applications at up to 150 °C. Its through-hole package style makes it suitable for flange mount configurations in various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,382 parts In-Stock

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Digiode

USA . 462 parts In-Stock

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Problanco Electronics

Mexico . 7,226 parts In-Stock

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TANS Electronics

Latvia . 7,031 parts In-Stock

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SupplyDigital Components

Austria . 7,006 parts In-Stock

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Kulean Microsystems

USA . 3,515 parts In-Stock

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Northwest PG Solutions

USA . 1,718 parts In-Stock

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Corphita

USA . 1,194 parts In-Stock

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Native Components

USA . 783 parts In-Stock

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Corohmni

South Africa . 257 parts In-Stock

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UHIMA Technologies

Türkiye . 167 parts In-Stock

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Overview

Unleash the power of innovation with the BUL43BAF by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and reliability in their Power Bipolar Junction Transistors (BJT). Ideal for switching applications, this NPN transistor offers exceptional performance and efficiency. With a maximum collector-emitter voltage of 350V and a maximum collector current of 2A, the BUL43BAF ensures smooth operation even in demanding conditions. Upgrade your projects with this versatile transistor and experience the difference in performance and durability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a long lifespan for the transistor.

Polarity or Channel Type: NPN

Offers flexibility in circuit design and compatibility with a wide range of applications.

Configuration: SINGLE

Simplifies circuit design and makes it easier to integrate the transistor into different systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing reliable performance in on/off states.

Package Shape: RECTANGULAR

Facilitates easy placement and mounting of the transistor in various electronic devices.

Terminal Form: THROUGH-HOLE

Enables secure and stable connections with the circuit board, reducing the risk of disconnection.

No. of Terminals: 3

Simplifies the connection process and ensures compatibility with a wide range of circuit layouts.

Package Style (Meter): FLANGE MOUNT

Allows for easy mounting and integration into larger systems, reducing installation time and effort.

Minimum DC Current Gain (hFE): 6

Ensures consistent and reliable amplification of current signals in the circuit.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for demanding environments and applications.

Maximum Collector-Emitter Voltage: 350 V

Provides a high voltage tolerance, allowing for use in circuits with varying voltage levels.

Transistor Element Material: SILICON

Offers high performance and reliability, making the transistor ideal for long-term use.

Maximum Collector Current (IC): 2 A

Can handle high current loads, making it suitable for power applications that require strong performance.

Terminal Finish: TIN LEAD

Ensures good conductivity and resistance to oxidation, maintaining stable connections over time.

Terminal Position: SINGLE

Simplifies the connection process and allows for easy integration into different circuit layouts.

Case Connection: COLLECTOR

Provides easy access to the collector terminal, facilitating connections and circuit design.

Nominal Transition Frequency (fT): 13 MHz

Offers high-speed switching capabilities, making the transistor suitable for fast-response applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL43BAF attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

350 V

Configuration:

Minimum DC Current Gain (hFE):

6

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUL43BAF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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