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BUL43BAN

Onsemi

BUL43BAN by Onsemi

BUL43BAN by Onsemi is a NPN Power BJT with max. VCE of 350V, IC of 2A, and hFE of 6. Ideal for switching applications due to its single configuration and high transition frequency of 13MHz. The transistor's through-hole terminals make it suitable for flange mount packages in various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,351 parts In-Stock

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2,351

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Digiode

USA . 776 parts In-Stock

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776

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Distributors (Availability)

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Native Components

USA . 673 parts In-Stock

1+ parts

$5,915.630

100+ parts

$5,797.317

1k+ parts

$5,738.161

10k+ parts

$5,679.005

673

$5,915.630

$5,797.317

$5,738.161

$5,679.005

Northwest PG Solutions

USA . 627 parts In-Stock

1+ parts

$6,507.193

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627

$6,507.193

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SupplyDigital Components

Austria . 5,464 parts In-Stock

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5,464

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Kulean Microsystems

USA . 5,088 parts In-Stock

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5,088

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TANS Electronics

Latvia . 5,042 parts In-Stock

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5,042

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Problanco Electronics

Mexico . 2,891 parts In-Stock

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2,891

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Corphita

USA . 557 parts In-Stock

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557

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Corohmni

South Africa . 215 parts In-Stock

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215

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UHIMA Technologies

Türkiye . 190 parts In-Stock

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190

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Overview

Discover the power and efficiency of the BUL43BAN by Onsemi, a top-quality Power Bipolar Junction Transistor designed for switching applications. With its NPN polarity and single configuration, this transistor offers unrivaled performance and reliability. Whether you're looking to optimize your industrial machinery or upgrade your automotive electronics, the BUL43BAN delivers exceptional value and benefits. Trust in Onsemi's reputation for excellence and choose the BUL43BAN for all your power transistor needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation properties and mechanical strength, making the transistor durable and reliable.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, offering good performance and versatility.

Configuration: SINGLE

Simplified design with a single transistor, making it easier to integrate into circuits.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance in such scenarios.

Package Shape: RECTANGULAR

Compact shape for efficient PCB layout and space-saving in electronic devices.

Terminal Form: THROUGH-HOLE

Allows for easy mounting and soldering onto PCBs, suitable for manual assembly processes.

No. of Terminals: 3

Simple 3-terminal configuration for easy connection and circuit integration.

Package Style (Meter): FLANGE MOUNT

Secure flange mount design for stable placement and heat dissipation, ensuring efficient operation.

Minimum DC Current Gain (hFE): 6

Decent current gain for reliable amplification and switching performance.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, suitable for various electronic applications where heat dissipation is important.

Maximum Collector-Emitter Voltage: 350 V

High voltage rating for handling different voltage levels in circuits, ensuring safety and reliability.

Transistor Element Material: SILICON

Silicon material provides good thermal conductivity and reliability, enhancing the transistor's performance.

Maximum Collector Current (IC): 2 A

High collector current rating for handling larger currents in circuits, making it versatile for different applications.

Terminal Finish: TIN LEAD

Tin lead finish for good solderability and corrosion resistance, ensuring long-term reliability.

Terminal Position: SINGLE

Single terminal position for easy connection and circuit integration.

Case Connection: COLLECTOR

Collector case connection for efficient heat dissipation, ensuring stable performance under high load conditions.

Nominal Transition Frequency (fT): 13 MHz

Decent transition frequency for fast switching speeds and high-frequency operation, suitable for various applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL43BAN attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

350 V

Configuration:

Minimum DC Current Gain (hFE):

6

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUL43BAN Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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