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BUL44AF

Onsemi

BUL44AF by Onsemi

BUL44AF by Onsemi is a NPN Power BJT with max. Vce of 400V and max. Ic of 2A. It has a min. hFE of 8, ideal for switching applications in various industries due to its high collector current capacity and transition frequency of 13MHz. The transistor comes in a plastic/epoxy package with through-hole terminals for easy mounting.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,998 parts In-Stock

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1,998

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Vyrian

USA . 1,654 parts In-Stock

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1,654

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Distributors (Availability)

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Native Components

USA . 266 parts In-Stock

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$1.845

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266

$1.845

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Northwest PG Solutions

USA . 327 parts In-Stock

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$2.030

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327

$2.030

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SupplyDigital Components

Austria . 7,955 parts In-Stock

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7,955

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Kulean Microsystems

USA . 7,189 parts In-Stock

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7,189

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Corphita

USA . 1,609 parts In-Stock

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1,609

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Problanco Electronics

Mexico . 1,033 parts In-Stock

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1,033

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UHIMA Technologies

Türkiye . 336 parts In-Stock

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Corohmni

South Africa . 253 parts In-Stock

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TANS Electronics

Latvia . 201 parts In-Stock

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Overview

Unleash the power of innovation with the BUL44AF by Onsemi. Known for their superior quality and reliability, Onsemi's Power Bipolar Junction Transistors (BJT) are a game-changer in the world of switching applications. This single NPN transistor offers a maximum collector-emitter voltage of 400V and a nominal transition frequency of 13MHz, providing unmatched performance and efficiency. With its flange mount package style and through-hole terminal form, this transistor is designed for ease of use and installation. Experience the difference that Onsemi's BUL44AF can make in your projects today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the internal components of the transistor, making it long-lasting and reliable.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering stability and efficiency.

Configuration: SINGLE

Simplifies circuit design and integration, making it easier to use in various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance and reliable operation.

Package Shape: RECTANGULAR

Allows for easy mounting and integration into circuit boards, saving space and providing flexibility in design.

Terminal Form: THROUGH-HOLE

Facilitates easy soldering and connection in through-hole PCBs, making installation hassle-free.

No. of Terminals: 3

Simplified terminal configuration for easier connection and integration into circuits.

Package Style (Meter): FLANGE MOUNT

Enables secure mounting and stable connection in various applications.

Minimum DC Current Gain (hFE): 8

Provides consistent and reliable amplification for signal processing.

Maximum Collector-Emitter Voltage: 400 V

Supports high voltage applications, making it versatile for a wide range of circuits.

Transistor Element Material: SILICON

Silicon transistors offer high performance, efficiency, and reliability in electronic circuits.

Maximum Collector Current (IC): 2 A

Capable of handling high current loads, making it suitable for power applications.

Terminal Finish: TIN LEAD

Provides a reliable and durable terminal finish for soldering and connection.

Terminal Position: SINGLE

Simplified terminal layout for easy connection and integration into circuits.

Case Connection: COLLECTOR

Clearly indicates the connection point for the collector terminal, making installation and troubleshooting easier.

Nominal Transition Frequency (fT): 13 MHz

Offers high frequency response for fast switching and signal processing, ideal for high-speed applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL44AF attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

8

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUL44AF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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