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BUL43BBV

Onsemi

BUL43BBV by Onsemi

BUL43BBV by Onsemi is a NPN Power BJT with max. VCE of 350V and IC of 2A. With hFE of 6, it operates up to 150 °C making it ideal for switching applications in various industries. Its through-hole terminal form and flange mount package style offer ease of installation and reliability.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 854 parts In-Stock

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Vyrian

USA . 443 parts In-Stock

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443

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Distributors (Availability)

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Native Components

USA . 529 parts In-Stock

1+ parts

$653.870

100+ parts

$640.793

1k+ parts

$634.254

10k+ parts

$627.715

529

$653.870

$640.793

$634.254

$627.715

Northwest PG Solutions

USA . 923 parts In-Stock

1+ parts

$719.257

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923

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TANS Electronics

Latvia . 8,291 parts In-Stock

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SupplyDigital Components

Austria . 6,487 parts In-Stock

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Kulean Microsystems

USA . 5,132 parts In-Stock

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Problanco Electronics

Mexico . 3,238 parts In-Stock

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Corphita

USA . 1,953 parts In-Stock

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1,953

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UHIMA Technologies

Türkiye . 807 parts In-Stock

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Corohmni

South Africa . 266 parts In-Stock

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Overview

Discover the power of the BUL43BBV by Onsemi, a high-quality Power Bipolar Junction Transistor perfect for switching applications. Manufactured by the trusted brand Onsemi, this NPN transistor offers reliability and efficiency in a convenient flange mount package. With a maximum collector-emitter voltage of 350V and a maximum collector current of 2A, this transistor provides great value and performance for your electronic projects. Upgrade your designs with the BUL43BBV and experience unparalleled precision and control.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

Allows for easy integration with other NPN components in circuits, providing compatibility.

Configuration: SINGLE

Simplified design and ease of use for applications requiring a single transistor.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring optimal performance in such scenarios.

Package Shape: RECTANGULAR

Offers a standard shape for easy mounting and placement on circuit boards.

Terminal Form: THROUGH-HOLE

Enables easy soldering and secure connection to the circuit board.

No. of Terminals: 3

Provides the necessary connectivity for the transistor to function as intended.

Package Style (Meter): FLANGE MOUNT

Allows for secure mounting and heat dissipation, enhancing overall performance.

Minimum DC Current Gain (hFE): 6

Ensures consistent and reliable amplification in the circuit.

Maximum Operating Temperature: 150 °C

Capable of operating at high temperatures without compromising performance.

Maximum Collector-Emitter Voltage: 350 V

Provides a high voltage tolerance, making it suitable for a wide range of applications.

Transistor Element Material: SILICON

Silicon material offers high efficiency, low noise, and reliable performance.

Maximum Collector Current (IC): 2 A

Capable of handling high current loads, suitable for various applications.

Terminal Finish: TIN LEAD

Ensures good conductivity and solderability for secure connections.

Terminal Position: SINGLE

Simplifies circuit design and connection, reducing complexity.

Case Connection: COLLECTOR

Allows for easy identification and connection within the circuit.

Nominal Transition Frequency (fT): 13 MHz

Provides high-speed performance for switching applications, ensuring efficiency.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL43BBV attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

350 V

Configuration:

Minimum DC Current Gain (hFE):

6

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUL43BBV Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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