Loading...

BUL43BBU

Onsemi

BUL43BBU by Onsemi

BUL43BBU by Onsemi is a NPN Power BJT with max. collector-emitter voltage of 350V, ideal for switching applications. Featuring a min. DC current gain of 6 and max. collector current of 2A, it operates up to 150 °C. This through-hole transistor in plastic/epoxy package is suitable for flange mount configurations.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,390 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,390

-

-

-

-

Vyrian

USA . 86 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

86

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 896 parts In-Stock

1+ parts

$440.700

100+ parts

$431.886

1k+ parts

$427.479

10k+ parts

$423.072

896

$440.700

$431.886

$427.479

$423.072

Northwest PG Solutions

USA . 1,714 parts In-Stock

1+ parts

$484.770

100+ parts

-

1k+ parts

-

10k+ parts

-

1,714

$484.770

-

-

-

SupplyDigital Components

Austria . 8,134 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,134

-

-

-

-

Kulean Microsystems

USA . 8,119 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,119

-

-

-

-

TANS Electronics

Latvia . 6,006 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,006

-

-

-

-

Corphita

USA . 1,694 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,694

-

-

-

-

Problanco Electronics

Mexico . 1,350 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,350

-

-

-

-

UHIMA Technologies

Türkiye . 803 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

803

-

-

-

-

Corohmni

South Africa . 113 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

113

-

-

-

-

Overview

Experience the unparalleled quality and reliability of Onsemi with the BUL43BBU Power Bipolar Junction Transistor. This NPN transistor is ideal for switching applications, offering a maximum collector-emitter voltage of 350V and a maximum collector current of 2A. With a minimum DC current gain of 6 and a nominal transition frequency of 13 MHz, this transistor provides unmatched performance and efficiency. Trust Onsemi's expertise in semiconductor manufacturing to deliver a superior product that meets your power switching needs with ease. Elevate your electronic projects with the BUL43BBU and unlock a world of possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and resistance to heat, making the transistor suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering good performance and reliability.

Configuration: SINGLE

A single configuration simplifies circuit design and installation, making it easier to use.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers efficient performance in turning on and off current flow.

Maximum Collector-Emitter Voltage: 350 V

With a high maximum voltage rating, this transistor can handle higher voltage applications without risk of breakdown.

Maximum Collector Current (IC): 2 A

The high collector current rating allows for higher power switching applications, making it versatile for a range of uses.

Nominal Transition Frequency (fT): 13 MHz

The high transition frequency enables fast switching speeds, making it suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL43BBU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

350 V

Configuration:

Minimum DC Current Gain (hFE):

6

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUL43BBU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20