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BUL43BAU

Onsemi

BUL43BAU by Onsemi

BUL43BAU by Onsemi is a NPN Power BJT with max. collector-emitter voltage of 350V, max. collector current of 2A, and min. DC current gain of 6. Ideal for switching applications, it operates at up to 150 °C and has a transition frequency of 13MHz in a through-hole package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 693 parts In-Stock

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Vyrian

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Problanco Electronics

Mexico . 6,513 parts In-Stock

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Kulean Microsystems

USA . 6,483 parts In-Stock

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TANS Electronics

Latvia . 4,184 parts In-Stock

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Corphita

USA . 2,052 parts In-Stock

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SupplyDigital Components

Austria . 1,366 parts In-Stock

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Northwest PG Solutions

USA . 980 parts In-Stock

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Native Components

USA . 467 parts In-Stock

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UHIMA Technologies

Türkiye . 258 parts In-Stock

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Corohmni

South Africa . 221 parts In-Stock

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Overview

Upgrade your power systems with the BUL43BAU by Onsemi. This high-quality Power Bipolar Junction Transistor (BJT) offers reliable switching capabilities in a compact, rectangular package. Manufactured by Onsemi, a trusted leader in semiconductor technology, this NPN transistor is designed for maximum performance and efficiency. Ideal for a variety of applications, from industrial automation to consumer electronics, the BUL43BAU delivers exceptional value, benefits, and advantages to customers seeking superior power management solutions. Experience the difference with Onsemi's BUL43BAU today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLastic/Epoxy package body material provides durability and resistance to environmental factors, making the transistor suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN type transistors are commonly used in switching applications and provide high efficiency in amplification and switching circuits.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces component count, making the product cost-effective and easy to use.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers high switching speed and efficiency, making it ideal for power control and conversion.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high temperatures without compromising performance, ensuring reliability in demanding environments.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL43BAU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

350 V

Configuration:

Minimum DC Current Gain (hFE):

6

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUL43BAU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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