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BUL43BBC

Onsemi

BUL43BBC by Onsemi

BUL43BBC by Onsemi is a NPN Power BJT with max. collector-emitter voltage of 350V, max. collector current of 2A, and min. DC current gain of 6. Ideal for switching applications due to its single configuration and rectangular package style (flange mount). Operates at up to 150 °C making it suitable for various industrial uses.

Median Price

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Digiode

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Problanco Electronics

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SupplyDigital Components

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Kulean Microsystems

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TANS Electronics

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Northwest PG Solutions

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UHIMA Technologies

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Native Components

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Overview

Enhance your electronics projects with the BUL43BBC by Onsemi, a high-quality Power Bipolar Junction Transistor that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this NPN transistor is perfect for switching applications. With a maximum collector-emitter voltage of 350V and a maximum collector current of 2A, this transistor provides the power and efficiency you need. Upgrade your designs with the BUL43BBC and experience the value and benefits it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides high durability and resistance to environmental factors, making the transistor suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications due to their ability to amplify and control electronic signals effectively.

Configuration: SINGLE

Single configuration transistors are simpler to use and troubleshoot, making them ideal for basic switching requirements.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring reliable and efficient performance in controlling electrical circuits.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand harsh environmental conditions and continuous usage without overheating.

Maximum Collector-Emitter Voltage: 350 V

The high voltage rating allows this transistor to handle higher voltage levels, making it suitable for a wide range of applications.

Maximum Collector Current (IC): 2 A

Capable of handling up to 2 amps of current, this transistor is suitable for medium power switching applications.

Nominal Transition Frequency (fT): 13 MHz

With a high transition frequency, this transistor can switch signals at a fast rate, making it suitable for high-speed switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL43BBC attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

350 V

Configuration:

Minimum DC Current Gain (hFE):

6

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUL43BBC Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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