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BUL45D2G

Onsemi

BUL45D2G by Onsemi

BUL45D2G by Onsemi is a NPN Power BJT with 400V VCE, 5A IC, and 75W Ptot. Ideal for switching applications, it features a single configuration with built-in diode in a plastic/epoxy package. With hFE of 10 and fT of 13MHz, this transistor operates up to 150°C.

Median Price

$1.280

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,225 parts In-Stock

1+ parts

$0.964

100+ parts

$0.906

1k+ parts

$0.819

10k+ parts

-

1,225

$0.964

$0.906

$0.819

-

DigiKey

USA . 17 parts In-Stock

1+ parts

$2.880

100+ parts

-

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17

$2.880

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Mouser Electronics

USA . 1,172 parts In-Stock

1+ parts

$2.970

100+ parts

$1.400

1k+ parts

$1.220

10k+ parts

$0.991

1,172

$2.970

$1.400

$1.220

$0.991

RS (Exports)

UK . 4,470 parts In-Stock

1+ parts

-

100+ parts

$1.280

1k+ parts

$0.910

10k+ parts

-

4,470

-

$1.280

$0.910

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Verical

USA . 885 parts In-Stock

1+ parts

-

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$1.024

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885

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$1.024

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Flip Electronics (Authorized)

USA . 14 parts In-Stock

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14

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Distributors (In-Stock)

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Digiode

USA . 105 parts In-Stock

1+ parts

$0.916

100+ parts

-

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105

$0.916

-

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Nova Conductors

Japan . 94 parts In-Stock

1+ parts

$0.999

100+ parts

-

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94

$0.999

-

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TME

Poland . 203 parts In-Stock

1+ parts

$1.830

100+ parts

$1.200

1k+ parts

$1.050

10k+ parts

-

203

$1.830

$1.200

$1.050

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VNN

France . 994 parts In-Stock

1+ parts

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994

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Vyrian

USA . 766 parts In-Stock

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766

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Corel Iberica Componentes, S.L.

Spain . 30 parts In-Stock

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30

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Flip Electronics

USA . 14 parts In-Stock

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14

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 2,461 parts In-Stock

1+ parts

$0.742

100+ parts

-

1k+ parts

-

10k+ parts

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2,461

$0.742

-

-

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Semicontronic

India . 1,028 parts In-Stock

1+ parts

$0.820

100+ parts

$0.800

1k+ parts

$0.795

10k+ parts

-

1,028

$0.820

$0.800

$0.795

-

Ampacity Inc.

Singapore . 782 parts In-Stock

1+ parts

$0.820

100+ parts

-

1k+ parts

-

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782

$0.820

-

-

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Corphita

USA . 199 parts In-Stock

1+ parts

$0.868

100+ parts

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199

$0.868

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Netroflash

USA . 500 parts In-Stock

1+ parts

$0.999

100+ parts

-

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500

$0.999

-

-

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Argo Parts USA

USA . 490 parts In-Stock

1+ parts

$0.999

100+ parts

-

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-

10k+ parts

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490

$0.999

-

-

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Component Stockers USA

USA . 18,097 parts In-Stock

1+ parts

$1.000

100+ parts

$0.910

1k+ parts

$0.850

10k+ parts

-

18,097

$1.000

$0.910

$0.850

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Continental Prestige Electronics

USA . 1,604 parts In-Stock

1+ parts

$1.890

100+ parts

$1.200

1k+ parts

$0.760

10k+ parts

-

1,604

$1.890

$1.200

$0.760

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Corohmni

South Africa . 59 parts In-Stock

1+ parts

$1.996

100+ parts

-

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59

$1.996

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

1+ parts

$2.335

100+ parts

$2.125

1k+ parts

$1.915

10k+ parts

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2,000

$2.335

$2.125

$1.915

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Lixinc

USA . 10,451 parts In-Stock

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10,451

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TANS Electronics

Latvia . 7,954 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,173 parts In-Stock

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7,173

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Alle Elektronik GmbH

Germany . 4,782 parts In-Stock

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4,782

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Allen Electronics Distributors

USA . 4,520 parts In-Stock

1+ parts

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100+ parts

$1.130

1k+ parts

$0.804

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4,520

-

$1.130

$0.804

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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3,700

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Perfect Parts

USA . 3,110 parts In-Stock

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Problanco Electronics

Mexico . 2,875 parts In-Stock

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2,875

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Kulean Microsystems

USA . 1,973 parts In-Stock

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1,973

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SupplyDigital Components

Austria . 1,427 parts In-Stock

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1,427

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UHIMA Technologies

Türkiye . 958 parts In-Stock

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958

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Authorized Procurement Solutions

USA . 450 parts In-Stock

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450

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Kepictronics

USA . 79 parts In-Stock

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79

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Assy Fe

Spain . 30 parts In-Stock

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30

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Overview

Unlock the power of reliable and efficient switching with the BUL45D2G by Onsemi. Crafted by a trusted manufacturer, this NPN Power Bipolar Junction Transistor offers unparalleled performance in various applications. With a maximum collector-emitter voltage of 400V and a maximum power dissipation of 75W, this transistor is designed to handle even the most demanding tasks. Whether you're looking to enhance your electronic design or optimize your power management system, the BUL45D2G delivers unmatched value, benefits, and advantages to customers seeking quality and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it durable and reliable.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, making this transistor versatile.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for convenient circuit designs and simplifies the overall setup.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in such scenarios.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without any performance degradation, suitable for demanding environments.

Maximum Collector-Emitter Voltage: 400 V

Can handle high voltages, making it ideal for applications where higher voltage levels are required.

Maximum Collector Current (IC): 5 A

Can handle high currents, allowing for power applications where higher currents are necessary.

Nominal Transition Frequency (fT): 13 MHz

Provides high frequency response, making it suitable for applications requiring fast switching speeds.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL45D2G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN EFFICIENT ANTISATURATION NETWORK

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

400 V

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUL45D2G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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