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BUL43BAS

Onsemi

BUL43BAS by Onsemi

BUL43BAS by Onsemi is a NPN Power BJT with max. VCE of 350V and IC of 2A. It has a min. hFE of 6, ideal for switching applications at up to 150 °C. The transistor comes in a through-hole package style suitable for flange mount connections.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,749 parts In-Stock

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1,749

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Digiode

USA . 539 parts In-Stock

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539

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 65 parts In-Stock

1+ parts

$7,777.640

100+ parts

$7,622.087

1k+ parts

$7,544.311

10k+ parts

$7,466.534

65

$7,777.640

$7,622.087

$7,544.311

$7,466.534

Northwest PG Solutions

USA . 28 parts In-Stock

1+ parts

$8,555.404

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28

$8,555.404

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Kulean Microsystems

USA . 8,128 parts In-Stock

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8,128

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Problanco Electronics

Mexico . 4,598 parts In-Stock

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4,598

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SupplyDigital Components

Austria . 2,140 parts In-Stock

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2,140

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UHIMA Technologies

Türkiye . 900 parts In-Stock

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900

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Corphita

USA . 224 parts In-Stock

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224

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Corohmni

South Africa . 171 parts In-Stock

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171

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TANS Electronics

Latvia . 7 parts In-Stock

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Overview

Experience the exceptional quality and reliability of the BUL43BAS Power Bipolar Junction Transistor from Onsemi. This NPN transistor offers superior performance in switching applications, making it an essential component for a wide range of electronic devices. With a maximum collector-emitter voltage of 350 V and a maximum collector current of 2 A, this transistor provides the power and efficiency you need. Trust in Onsemi's reputation for excellence and innovation, and elevate your designs with the BUL43BAS today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan and reliability in various operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, making this transistor versatile for a wide range of circuit designs.

Configuration: SINGLE

Simplified design and easier integration into circuits, ideal for basic switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in controlling electrical signals.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for applications where heat dissipation is a concern.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL43BAS attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

350 V

Configuration:

Minimum DC Current Gain (hFE):

6

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUL43BAS Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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