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BUL43BDW

Onsemi

BUL43BDW by Onsemi

BUL43BDW by Onsemi is a NPN Power BJT with max. Vce of 350V, Ic of 2A, and hFE of 6. Ideal for switching applications due to its single configuration and high transition frequency of 13MHz. The transistor's through-hole terminals and flange mount package make it suitable for various industrial uses.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

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1k+

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Vyrian

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Digiode

USA . 429 parts In-Stock

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TANS Electronics

Latvia . 6,222 parts In-Stock

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Problanco Electronics

Mexico . 5,044 parts In-Stock

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Kulean Microsystems

USA . 3,053 parts In-Stock

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Corphita

USA . 1,926 parts In-Stock

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SupplyDigital Components

Austria . 1,879 parts In-Stock

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Northwest PG Solutions

USA . 1,658 parts In-Stock

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UHIMA Technologies

Türkiye . 873 parts In-Stock

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Corohmni

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Overview

Enhance the performance of your electronic devices with the Onsemi BUL43BDW Power Bipolar Junction Transistor. Known for its high-quality manufacturing by Onsemi, this NPN transistor is ideal for switching applications. With a maximum collector-emitter voltage of 350V and a maximum collector current of 2A, this transistor offers reliability and efficiency. Perfect for various electronic applications, this transistor provides value and benefits to customers looking for superior performance in their devices. Trust Onsemi for top-notch quality and innovation in every product.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, making it durable and reliable for long-term use.

Polarity or Channel Type: NPN

NPN transistors are commonly used in electronic circuits for their high efficiency and fast switching speeds.

Configuration: SINGLE

SINGLE configuration simplifies circuit design and makes the transistor easy to use in various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can handle rapid changes in current and voltage with ease.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand heat and operate reliably in challenging environments.

Maximum Collector-Emitter Voltage: 350 V

The high collector-emitter voltage rating allows this transistor to be used in a wide range of power supply and switching applications.

Maximum Collector Current (IC): 2 A

Capable of handling up to 2 amps of current, this transistor is suitable for medium-power applications.

Nominal Transition Frequency (fT): 13 MHz

With a high transition frequency, this transistor can switch on and off quickly, making it ideal for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL43BDW attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

350 V

Configuration:

Minimum DC Current Gain (hFE):

6

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUL43BDW Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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