Loading...

BUL43BBD

Onsemi

BUL43BBD by Onsemi

BUL43BBD by Onsemi is a NPN Power BJT with max. VCE of 350V, IC of 2A, and hFE of 6. Ideal for switching applications, it operates up to 150 °C and has fT of 13MHz. The transistor comes in a plastic/epoxy package with through-hole terminals in a rectangular shape suitable for flange mounting.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 654 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

654

-

-

-

-

Vyrian

USA . 117 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

117

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 275 parts In-Stock

1+ parts

$5,283.480

100+ parts

$5,177.810

1k+ parts

$5,124.976

10k+ parts

$5,072.141

275

$5,283.480

$5,177.810

$5,124.976

$5,072.141

Northwest PG Solutions

USA . 1,902 parts In-Stock

1+ parts

$5,811.828

100+ parts

-

1k+ parts

-

10k+ parts

-

1,902

$5,811.828

-

-

-

SupplyDigital Components

Austria . 6,528 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,528

-

-

-

-

Kulean Microsystems

USA . 5,473 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,473

-

-

-

-

Problanco Electronics

Mexico . 4,462 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,462

-

-

-

-

TANS Electronics

Latvia . 3,217 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,217

-

-

-

-

Corphita

USA . 809 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

809

-

-

-

-

UHIMA Technologies

Türkiye . 711 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

711

-

-

-

-

Corohmni

South Africa . 400 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

400

-

-

-

-

Overview

Experience the unmatched quality and reliability of Onsemi with the BUL43BBD Power Bipolar Junction Transistor. Perfect for switching applications, this NPN transistor offers a maximum collector-emitter voltage of 350V and a maximum collector current of 2A. Its high DC current gain and nominal transition frequency ensure optimal performance in various electronic circuits. Trust Onsemi's reputation for excellence and innovation to bring you a product that delivers exceptional value and efficiency. Upgrade your designs with the BUL43BBD today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLastic/Epoxy material provides durability and protection, making the transistor a reliable choice for various applications.

Polarity or Channel Type: NPN

NPN polarity allows for easy integration into circuits and provides high efficiency in switching applications.

Configuration: SINGLE

Single configuration simplifies circuit design and ensures easy installation.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring high performance and reliability in such scenarios.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and placement on circuit boards.

Terminal Form: THROUGH-HOLE

Through-hole terminal form enables secure connections and easy soldering in PCBs.

No. of Terminals: 3

3 terminals provide necessary connections for proper functionality in the circuit.

Package Style (Meter): FLANGE MOUNT

Flange mount package style allows for convenient mounting and dismounting of the transistor.

Minimum DC Current Gain (hFE): 6

A minimum DC current gain of 6 ensures optimal transistor performance in various applications.

Maximum Operating Temperature: 150 °C

High maximum operating temperature of 150 °C allows for reliable performance in demanding conditions.

Maximum Collector-Emitter Voltage: 350 V

High maximum collector-emitter voltage of 350V allows for safe operation in high voltage applications.

Transistor Element Material: SILICON

Silicon material ensures high performance and efficiency in the transistor element.

Maximum Collector Current (IC): 2 A

High maximum collector current of 2A allows for handling higher power loads.

Terminal Finish: TIN LEAD

Tin lead terminal finish ensures reliable and secure connections in the circuit.

Terminal Position: SINGLE

Single terminal position simplifies circuit design and installation.

Case Connection: COLLECTOR

Collector case connection provides easy connectivity in circuit designs.

Nominal Transition Frequency (fT): 13 MHz

High nominal transition frequency of 13MHz allows for fast switching speeds in applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL43BBD attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

350 V

Configuration:

Minimum DC Current Gain (hFE):

6

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUL43BBD Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20