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BUL43BBS

Onsemi

BUL43BBS by Onsemi

BUL43BBS by Onsemi is a NPN Power BJT with max. VCE of 350V and IC of 2A. With hFE of 6, it operates up to 150 °C making it ideal for switching applications in various industries. The transistor's silicon element and through-hole terminal form ensure reliable performance in a rectangular package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,669 parts In-Stock

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1,669

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Vyrian

USA . 1,549 parts In-Stock

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1,549

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Distributors (Availability)

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Problanco Electronics

Mexico . 7,921 parts In-Stock

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7,921

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TANS Electronics

Latvia . 3,618 parts In-Stock

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3,618

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SupplyDigital Components

Austria . 2,932 parts In-Stock

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2,932

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Kulean Microsystems

USA . 2,425 parts In-Stock

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2,425

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Northwest PG Solutions

USA . 2,366 parts In-Stock

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2,366

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Corphita

USA . 1,729 parts In-Stock

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1,729

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Native Components

USA . 624 parts In-Stock

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624

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UHIMA Technologies

Türkiye . 192 parts In-Stock

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Corohmni

South Africa . 65 parts In-Stock

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Overview

Upgrade your electronic devices with the reliable BUL43BBS Power Bipolar Junction Transistor by Onsemi. Known for their superior quality and innovative technology, Onsemi delivers top-notch components for a wide range of applications. The BUL43BBS offers customers exceptional value and benefits, providing high performance in switching applications. With its NPN configuration and maximum collector-emitter voltage of 350V, this transistor is a must-have for any project requiring precision and efficiency. Trust Onsemi to power up your creations with the best in the industry.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components, ensuring reliable operation.

Polarity or Channel Type: NPN

Commonly used in amplification and switching applications, offering versatility in circuit design.

Configuration: SINGLE

Simplifies circuit design and layout, making it easier to integrate into various electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance.

Package Shape: RECTANGULAR

Allows for easy mounting and placement within a circuit or on a PCB.

Terminal Form: THROUGH-HOLE

Facilitates easy soldering onto a PCB, ensuring a secure and reliable connection.

No. of Terminals: 3

Simplifies the connection and usage of the transistor in a circuit.

Package Style (Meter): FLANGE MOUNT

Enables secure mounting in a variety of applications, ensuring stability and durability.

Minimum DC Current Gain (hFE): 6

Provides sufficient gain for amplification and switching purposes in various circuits.

Maximum Operating Temperature: 150 °C

Allows for reliable operation in a wide range of environmental conditions.

Maximum Collector-Emitter Voltage: 350 V

Can handle high voltage applications, increasing the versatility of the transistor.

Transistor Element Material: SILICON

Silicon-based transistors offer high efficiency and reliability in electronic circuits.

Maximum Collector Current (IC): 2 A

Can handle moderate current levels, suitable for a wide range of applications.

Terminal Finish: TIN LEAD

Provides a reliable and low-resistance connection for optimal performance.

Terminal Position: SINGLE

Simplifies the wiring and connections in a circuit, ensuring ease of use.

Case Connection: COLLECTOR

Facilitates easy connection to the collector terminal, enhancing usability in various circuits.

Nominal Transition Frequency (fT): 13 MHz

Indicates the frequency at which the transistor can effectively switch signals, making it suitable for high-speed applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL43BBS attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

350 V

Configuration:

Minimum DC Current Gain (hFE):

6

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUL43BBS Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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