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BUL128

STMicroelectronics

BUL128 by STMicroelectronics

BUL128 by STMicroelectronics is a NPN BJT transistor with VCEsat of 1.5V, IC of 4A, and hFE of 10. It is used for switching applications in circuits requiring up to 60W power dissipation. The device operates at a max temperature of 150 °C and has a collector-emitter voltage rating of 400V.

Median Price

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Lifecycle Status

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8

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Q Components

USA . 96,195 parts In-Stock

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Anansix

USA . 2,716 parts In-Stock

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Vyrian

USA . 2,427 parts In-Stock

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Digiode

USA . 1,622 parts In-Stock

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ACDS - Activité Composants Distribution Service

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LittleDiode

UK . 43 parts In-Stock

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Zilex Electronics Inc.

Canada . 40 parts In-Stock

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EMSNET

USA . 33 parts In-Stock

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Native Components

USA . 459 parts In-Stock

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$0.549

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459

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Northwest PG Solutions

USA . 1,420 parts In-Stock

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$0.604

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IDEA Electronic Components Group

UK . 1,671 parts In-Stock

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$0.824

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$0.742

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Advanced Electronics

New Zealand . 100 parts In-Stock

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$1.135

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$1.033

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$0.931

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MKK Technologies

India . 2,050 parts In-Stock

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$1.550

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DigiPath Technology Company

USA . 2,050 parts In-Stock

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$1.550

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AZTECH Wire

Italy . 709 parts In-Stock

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$21.840

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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Kepictronics

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QUARKTWIN TECHNOLOGY LTD

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Authorized Procurement Solutions

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A-Z Elektronik GmbH

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Alle Elektronik GmbH

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Perfect Parts

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Corphita

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Cyclops Electronics Ltd (Excess)

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GreenTree Electronics

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Parana Technologies

USA . 252 parts In-Stock

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Assy Fe

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Overview

Transform your power management systems with the BUL128 from STMicroelectronics. As a leader in semiconductor manufacturing, STMicroelectronics delivers unmatched quality and reliability in the Power Bipolar Junction Transistors (BJT) category. Ideal for switching applications, this NPN transistor offers a maximum VCEsat of 1.5V and a maximum collector current of 4A, providing exceptional performance and efficiency. With a maximum operating temperature of 150 °C and a maximum power dissipation of 70W, the BUL128 ensures optimal functionality in various environments. Upgrade your electronic designs today with the BUL128 and experience the superior value and benefits it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for a wide range of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications, making this product versatile for various circuit designs.

Configuration: SINGLE

The single configuration simplifies the design process and makes it easier to integrate into circuit boards.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers reliable performance in such scenarios.

Maximum VCEsat: 1.5 V

Low saturation voltage helps in reducing power loss and improving efficiency in switching circuits.

Package Shape: RECTANGULAR

The rectangular shape makes it easier to mount and secure the transistor in a circuit layout.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer secure connections and ease of soldering during assembly.

Maximum Power Dissipation (Abs): 60 W

High power dissipation capability allows the transistor to handle demanding applications without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount package style provides mechanical stability and heat dissipation for reliable performance.

Maximum Power Dissipation Ambient: 70 W

With high ambient power dissipation, the transistor can operate efficiently in various environmental conditions.

Minimum DC Current Gain (hFE): 10

A higher DC current gain ensures consistent and accurate amplification in switching operations.

Maximum Operating Temperature: 150 °C

With a high operating temperature range, this transistor can withstand extended use in different applications.

Maximum Collector-Emitter Voltage: 400 V

High collector-emitter voltage rating makes this transistor suitable for high voltage switching applications.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability, making this transistor a durable choice for various uses.

Maximum Collector Current (IC): 4 A

High collector current rating allows the transistor to handle large currents without getting damaged.

Maximum Turn Off Time (toff): 3400 ns

Fast turn-off time ensures quick switching transitions, enhancing the overall efficiency of the transistor.

Terminal Finish: MATTE TIN

Matte tin finish on terminals provides excellent solderability and corrosion resistance for lasting performance.

Terminal Position: SINGLE

Single terminal position simplifies installation and connections, making it easier to integrate into circuit designs.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL128 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

70 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

3400 ns

Maximum VCEsat:

1.5 V

Trade Compliance

BUL128 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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