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BU808DFI

STMicroelectronics

BU808DFI by STMicroelectronics

BU808DFI by STMicroelectronics is an NPN Darlington BJT designed for switching applications. It features a max VCEsat of 1.6V, supports up to 8A collector current, and operates at temperatures up to 150 °C. Ideal for high-power circuits with efficient thermal management.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,238 parts In-Stock

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Anansix

USA . 1,284 parts In-Stock

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Digiode

USA . 1,094 parts In-Stock

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Donberg Electronics Ltd

Ireland . 38 parts In-Stock

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LittleDiode

UK . 16 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 2 parts In-Stock

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IDEA Electronic Components Group

UK . 1,759 parts In-Stock

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$0.457

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-

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$0.412

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1,759

$0.457

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$0.412

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MKK Technologies

India . 93 parts In-Stock

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$0.860

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93

$0.860

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DigiPath Technology Company

USA . 93 parts In-Stock

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$0.860

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93

$0.860

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AZTECH Wire

Italy . 635 parts In-Stock

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$18.240

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635

$18.240

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Component Stockers USA

USA . 774 parts In-Stock

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$99.990

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Kepictronics

USA . 13,000 parts In-Stock

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Authorized Procurement Solutions

USA . 3,500 parts In-Stock

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Perfect Parts

USA . 2,496 parts In-Stock

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Corphita

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Parana Technologies

USA . 923 parts In-Stock

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$0.547

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Native Components

USA . 481 parts In-Stock

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Northwest PG Solutions

USA . 215 parts In-Stock

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Assy Fe

Spain . 30 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 17 parts In-Stock

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Overview

Unlock the potential of your designs with the BU808DFI from STMicroelectronics, a leader in cutting-edge semiconductor solutions. This robust NPN Darlington transistor combines exceptional switching efficiency with an integrated diode and resistor, making it ideal for high-performance applications. With its reliable construction and impressive power handling capabilities, the BU808DFI empowers engineers to create innovative, energy-efficient systems that stand out in today’s competitive market. Elevate your projects with quality you can trust!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body provides durability and resistance to environmental conditions, making it suitable for diverse applications.

Polarity or Channel Type: NPN

The NPN configuration allows for better performance in various applications, especially in switching, making it a versatile choice.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration provides high current gain, enhancing efficiency and making this transistor ideal for amplifying weak signals.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can handle rapid on/off states effectively, improving overall circuit performance.

Maximum VCEsat: 1.6 V

A low VCEsat value indicates better switching performance and lower power loss, contributing to higher efficiency in electronic circuits.

Package Shape: RECTANGULAR

The rectangular shape allows for more compact circuit designs, enabling efficient use of board space in electronic devices.

Terminal Form: THROUGH-HOLE

Through-hole terminals ensure a robust physical connection to the circuit board, which is ideal for maintaining reliability in demanding applications.

No. of Terminals: 3

With three terminals, this BJT offers versatile connections for various circuit designs, making it suitable for a wide range of applications.

Maximum Power Dissipation (Abs): 50 W

High power dissipation capability allows this transistor to handle demanding applications without overheating, ensuring reliable operation.

Package Style (Meter): FLANGE MOUNT

Flange mount packaging aids in heat dissipation and provides stability, which is crucial in high-power applications.

Maximum Power Dissipation Ambient: 52 W

Ability to dissipate power in ambient conditions enhances longevity and reliability, making it suitable for extended use in various environments.

Minimum DC Current Gain (hFE): 60

A minimum current gain of 60 ensures that this transistor effectively amplifies weak signals, which is vital for efficient circuit performance.

Maximum Operating Temperature: 150 °C

The capability to operate at high temperatures allows this transistor to function effectively in harsh environments, ensuring versatility in applications.

Maximum Collector-Emitter Voltage: 700 V

High voltage tolerance makes this BJT suitable for power applications where large voltage swings are common, enhancing its usability.

Transistor Element Material: SILICON

Silicon as a material offers excellent performance characteristics in terms of speed and efficiency, making it a reliable choice for many applications.

Maximum Collector Current (IC): 8 A

The ability to handle up to 8 A of collector current makes this transistor suitable for high-power applications, ensuring effective performance under load.

Maximum Turn Off Time (toff): 3800 ns

A fast turn-off time enhances switching speed, making this transistor ideal for applications requiring quick response and efficient performance.

Terminal Position: SINGLE

Single terminal position simplifies PCB layout and allows for straightforward integration into various circuit designs.

Case Connection: ISOLATED

Isolated case connection helps prevent unwanted interactions with other circuit components, enhancing overall circuit integrity.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BU808DFI attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

700 V

Minimum DC Current Gain (hFE):

60

JEDEC-95 Code:

TO-218

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

52 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

3800 ns

Maximum VCEsat:

1.6 V

Trade Compliance

BU808DFI Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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