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BU806AJ

Onsemi

BU806AJ by Onsemi

BU806AJ by Onsemi is a NPN Power BJT with a min hFE of 100, max VCE of 200V, and max IC of 8A. Ideal for amplifier applications, it features a Darlington configuration with built-in diode and resistor in a rectangular package suitable for flange mount installations.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,874 parts In-Stock

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Vyrian

USA . 1,809 parts In-Stock

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SupplyDigital Components

Austria . 6,095 parts In-Stock

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TANS Electronics

Latvia . 4,668 parts In-Stock

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Problanco Electronics

Mexico . 4,215 parts In-Stock

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Kulean Microsystems

USA . 2,854 parts In-Stock

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Corphita

USA . 1,468 parts In-Stock

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Northwest PG Solutions

USA . 1,011 parts In-Stock

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Corohmni

South Africa . 155 parts In-Stock

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UHIMA Technologies

Türkiye . 124 parts In-Stock

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Overview

Unleash the power of innovation with the BU806AJ by Onsemi, a top-of-the-line Power Bipolar Junction Transistor designed to amplify signals with unparalleled precision. Crafted by the renowned manufacturer Onsemi, this NPN transistor boasts a DARLINGTON configuration with a built-in diode and resistor for seamless integration into various amplifier applications. Elevate your projects with the BU806AJ's maximum collector-emitter voltage of 200V and maximum collector current of 8A, delivering unmatched performance and reliability. Upgrade your designs today with Onsemi's cutting-edge technology and experience the difference firsthand.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material makes the transistor lightweight and durable, suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are widely used in amplification circuits, making this product versatile for amplifier applications.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Darlington configuration provides high current gain and built-in diode and resistor add protection and convenience in circuit design.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, offering reliable performance in amplification circuits.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and integration into circuit boards or systems.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure and stable connections, suitable for industrial and commercial applications.

No. of Terminals: 3

Three terminals simplify circuit connections and make installation easier.

Package Style (Meter): FLANGE MOUNT

Flange mount style allows for secure installation and mounting in various equipment.

Minimum DC Current Gain (hFE): 100

High DC current gain ensures efficient amplification and signal processing in circuits.

Maximum Collector-Emitter Voltage: 200 V

High maximum collector-emitter voltage allows for use in high voltage circuits, expanding the range of applications.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability in electronic circuits.

Maximum Collector Current (IC): 8 A

High maximum collector current rating allows for use in high power applications.

Terminal Finish: TIN LEAD

Tin lead finish provides good conductivity and solderability for reliable connections.

Terminal Position: SINGLE

Single terminal position simplifies circuit design and installation.

Case Connection: COLLECTOR

Collector case connection allows for efficient heat dissipation, ensuring optimal performance under high loads.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BU806AJ attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

200 V

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BU806AJ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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