Loading...

BU806BU

Onsemi

BU806BU by Onsemi

BU806BU by Onsemi is a NPN BJT with Darlington configuration, ideal for amplifier applications. Features include hFE of 100, VCE of 200V, and IC of 8A. Package style is flange mount with through-hole terminals in plastic/epoxy material.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,711 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,711

-

-

-

-

Vyrian

USA . 569 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

569

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Problanco Electronics

Mexico . 7,735 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,735

-

-

-

-

Kulean Microsystems

USA . 4,208 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,208

-

-

-

-

TANS Electronics

Latvia . 4,032 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,032

-

-

-

-

Corphita

USA . 2,215 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,215

-

-

-

-

Northwest PG Solutions

USA . 1,257 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,257

-

-

-

-

UHIMA Technologies

Türkiye . 888 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

888

-

-

-

-

SupplyDigital Components

Austria . 438 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

438

-

-

-

-

Native Components

USA . 352 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

352

-

-

-

-

Corohmni

South Africa . 183 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

183

-

-

-

-

Overview

Unlock the power of innovation with the BU806BU by Onsemi. Crafted with precision and expertise, this Power Bipolar Junction Transistor offers unrivaled performance and reliability for all your amplifier needs. Its NPN configuration, coupled with a built-in diode and resistor, ensures seamless operation in diverse applications. With a maximum collector-emitter voltage of 200V and a collector current of 8A, this transistor guarantees optimal efficiency and stability. Trust Onsemi to deliver quality products that exceed expectations, providing you with the value and benefits you deserve. Upgrade your projects today with the BU806BU.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides good insulation and protection for the transistor, making it durable and reliable.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier circuits, ensuring compatibility with various amplification applications.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration offers high current gain and the built-in diode and resistor simplify circuit design and save space.

Transistor Application: AMPLIFIER

Designed specifically for amplification purposes, ensuring optimal performance in amplifier circuits.

Package Shape: RECTANGULAR

The rectangular shape allows for easy mounting and integration into various electronic devices.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and ease of soldering during assembly.

No. of Terminals: 3

Having 3 terminals allows for easy connection in circuit applications.

Package Style (Meter): FLANGE MOUNT

The flange mount style provides stability and reliability in mounting the transistor in place.

Minimum DC Current Gain (hFE): 100

A high minimum DC current gain ensures consistent and reliable amplification performance.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high temperatures in various applications.

Maximum Collector-Emitter Voltage: 200 V

The high maximum collector-emitter voltage allows for use in a wide range of voltage applications.

Transistor Element Material: SILICON

Silicon transistors offer good electrical properties and reliability, making them suitable for various electronic applications.

Maximum Collector Current (IC): 8 A

The high maximum collector current rating allows for handling higher current levels in circuits.

Terminal Finish: TIN LEAD

The tin lead terminal finish offers good conductivity and solderability for secure connections.

Terminal Position: SINGLE

Having a single terminal position simplifies the connection process in circuit applications.

Case Connection: COLLECTOR

The collector case connection ensures proper heat dissipation and electrical conductivity.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BU806BU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

200 V

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BU806BU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20