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BU806AF

Onsemi

BU806AF by Onsemi

BU806AF by Onsemi is a NPN Darlington transistor with built-in diode and resistor, ideal for amplifier applications. It has a min DC current gain of 100 (hFE), max collector-emitter voltage of 200V, and max collector current of 8A. The package style is flange mount with through-hole terminals in a rectangular shape.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

< 1k

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Digiode

USA . 644 parts In-Stock

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Vyrian

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Problanco Electronics

Mexico . 3,853 parts In-Stock

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TANS Electronics

Latvia . 3,458 parts In-Stock

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SupplyDigital Components

Austria . 2,954 parts In-Stock

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Kulean Microsystems

USA . 394 parts In-Stock

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Native Components

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Corphita

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Northwest PG Solutions

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Corohmni

South Africa . 114 parts In-Stock

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UHIMA Technologies

Türkiye . 16 parts In-Stock

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Overview

Enhance your amplifier designs with the BU806AF Power Bipolar Junction Transistor by Onsemi. With a built-in diode and resistor, this NPN transistor offers unparalleled performance and reliability. From its durable plastic/epoxy package to its high DC current gain of 100, this transistor is ideal for a wide range of applications. Trust in Onsemi's reputation for quality and innovation, and experience the value and benefits that the BU806AF can bring to your projects. Amp up your designs with the BU806AF today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material makes the product lightweight and durable, suitable for various electronic applications.

Polarity or Channel Type: NPN

NPN configuration allows for easy integration with other NPN transistors and components in electronic circuits.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Darlington configuration with built-in diode and resistor simplifies the design process and enhances performance in amplifier applications.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplifying signals.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and installation in electronic devices.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and ease of soldering during installation.

No. of Terminals: 3

3 terminals allow for straightforward connections in circuits, reducing complexity in wiring.

Package Style (Meter): FLANGE MOUNT

Flange mount package style ensures stable mounting and heat dissipation for better performance.

Minimum DC Current Gain (hFE): 100

Minimum DC current gain of 100 ensures reliable and consistent amplification of signals.

Maximum Collector-Emitter Voltage: 200 V

With a maximum collector-emitter voltage of 200V, the transistor can handle higher voltage applications with ease.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability, making it suitable for a wide range of electronic applications.

Maximum Collector Current (IC): 8 A

With a maximum collector current of 8A, the transistor can handle high current loads efficiently.

Terminal Finish: TIN LEAD

Tin lead terminal finish ensures good conductivity and solderability, ensuring secure connections.

Terminal Position: SINGLE

Single terminal position simplifies installation and reduces wiring complexity in electronic circuits.

Case Connection: COLLECTOR

Collector case connection provides a reliable connection for optimal performance in amplifier applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BU806AF attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

200 V

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BU806AF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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