Loading...

BU806/F1

STMicroelectronics

BU806/F1 by STMicroelectronics

STMicroelectronics' BU806/F1 is a NPN BJT with Darlington configuration, built-in diode, and resistor. Ideal for switching applications, it has a max collector-emitter voltage of 200V and max collector current of 8A. With a max operating temperature of 150 °C, this transistor is designed for through-hole mounting in flange style packages.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,634 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,634

-

-

-

-

Anansix

USA . 1,088 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,088

-

-

-

-

Digiode

USA . 327 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

327

-

-

-

-

Electronics Depot

USA . 27 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

27

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 931 parts In-Stock

1+ parts

$0.113

100+ parts

-

1k+ parts

-

10k+ parts

$0.108

931

$0.113

-

-

$0.108

Northwest PG Solutions

USA . 2,317 parts In-Stock

1+ parts

$0.124

100+ parts

-

1k+ parts

-

10k+ parts

$0.110

2,317

$0.124

-

-

$0.110

IDEA Electronic Components Group

UK . 2,216 parts In-Stock

1+ parts

$1.670

100+ parts

-

1k+ parts

$1.503

10k+ parts

-

2,216

$1.670

-

$1.503

-

MKK Technologies

India . 1,391 parts In-Stock

1+ parts

$3.140

100+ parts

-

1k+ parts

-

10k+ parts

-

1,391

$3.140

-

-

-

DigiPath Technology Company

USA . 1,391 parts In-Stock

1+ parts

$3.140

100+ parts

-

1k+ parts

-

10k+ parts

-

1,391

$3.140

-

-

-

Corphita

USA . 4,318 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,318

-

-

-

-

Parana Technologies

USA . 1,150 parts In-Stock

1+ parts

-

100+ parts

$1.996

1k+ parts

-

10k+ parts

-

1,150

-

$1.996

-

-

Overview

Discover the power of the BU806/F1 by STMicroelectronics, a high-quality Power Bipolar Junction Transistor designed for switching applications. Manufactured by industry leader STMicroelectronics, this NPN transistor offers unparalleled performance and reliability. With its Darlington configuration, built-in diode and resistor, and maximum collector current of 8A, this transistor is a versatile solution for a wide range of electronic projects. Trust in STMicroelectronics to deliver cutting-edge technology and superior quality in every product. Elevate your designs with the BU806/F1 and experience the value and benefits it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection, making the transistor suitable for a wide range of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications, making this transistor versatile and useful.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration, along with the built-in diode and resistor, simplifies the design of circuits and enhances performance.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers reliable performance and efficient switching capabilities.

Package Shape: RECTANGULAR

The rectangular shape allows for easy mounting and integration into various electronic devices or circuits.

Terminal Form: THROUGH-HOLE

The through-hole terminal form makes soldering and connecting the transistor easier and more secure.

No. of Terminals: 3

Having 3 terminals allows for easy connection and integration into circuits, making it user-friendly.

Package Style (Meter): FLANGED MOUNT

The flanged mount style ensures stability and secure mounting of the transistor in electronic systems.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand demanding operating conditions and environments.

Maximum Collector-Emitter Voltage: 200 V

The high maximum collector-emitter voltage rating allows for use in a wide range of voltage applications.

Transistor Element Material: SILICON

Silicon transistors are known for their reliability and efficiency, making this transistor a dependable choice.

Maximum Collector Current (IC): 8 A

With a maximum collector current rating of 8 A, this transistor can handle high current requirements efficiently.

Terminal Position: SINGLE

The single terminal position simplifies the connection process and ensures proper alignment in circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BU806/F1 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

BUILT IN BIAS RESISTOR

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

200 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BU806/F1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20