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BU806BD

Onsemi

BU806BD by Onsemi

BU806BD by Onsemi is a NPN power BJT with Darlington configuration, ideal for amplifier applications. It features a min hFE of 100, max operating temp of 150 °C, and max VCE of 200V. This transistor has a collector current rating of 8A and comes in a through-hole package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,871 parts In-Stock

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Vyrian

USA . 1,569 parts In-Stock

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Kulean Microsystems

USA . 6,108 parts In-Stock

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Problanco Electronics

Mexico . 4,540 parts In-Stock

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SupplyDigital Components

Austria . 1,632 parts In-Stock

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Northwest PG Solutions

USA . 1,341 parts In-Stock

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Corphita

USA . 1,138 parts In-Stock

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TANS Electronics

Latvia . 837 parts In-Stock

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UHIMA Technologies

Türkiye . 835 parts In-Stock

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Native Components

USA . 324 parts In-Stock

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Corohmni

South Africa . 103 parts In-Stock

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Overview

Discover the BU806BD by Onsemi, a high-quality Power Bipolar Junction Transistor that offers exceptional performance and reliability. Manufactured by Onsemi, a leading name in the industry, this NPN transistor is perfect for amplifier applications. With a built-in diode and resistor, it simplifies installation and saves time and money. The BU806BD boasts a minimum DC current gain of 100 and a maximum operating temperature of 150 °C, ensuring efficient operation even under challenging conditions. Trust Onsemi for top-notch quality and innovation in power transistors like the BU806BD.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product suitable for amplifier applications.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration provides high gain and allows for low current drive, making this transistor suitable for amplifier circuits. The built-in diode and resistor provide additional functionality without the need for external components.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplification circuits.

Package Shape: RECTANGULAR

The rectangular shape allows for easy mounting and integration into circuit designs.

Maximum Collector-Emitter Voltage: 200 V

With a maximum voltage rating of 200V, this transistor can handle higher voltages, providing versatility in different circuit designs.

Maximum Collector Current (IC): 8 A

The high maximum collector current rating of 8A allows for handling larger currents, making this transistor suitable for power applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BU806BD attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

200 V

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BU806BD Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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