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BU806AN

Onsemi

BU806AN by Onsemi

BU806AN by Onsemi is a NPN Darlington transistor with built-in diode and resistor, ideal for amplifier applications. It has a min DC current gain of 100 (hFE), max operating temperature of 150 °C, and max collector-emitter voltage of 200V. This power BJT comes in a plastic/epoxy package with through-hole terminals and can handle up to 8A collector current.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,804 parts In-Stock

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Digiode

USA . 1,031 parts In-Stock

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Kulean Microsystems

USA . 5,969 parts In-Stock

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SupplyDigital Components

Austria . 2,459 parts In-Stock

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TANS Electronics

Latvia . 1,750 parts In-Stock

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UHIMA Technologies

Türkiye . 730 parts In-Stock

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730

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Native Components

USA . 635 parts In-Stock

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635

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Corphita

USA . 614 parts In-Stock

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Problanco Electronics

Mexico . 233 parts In-Stock

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Corohmni

South Africa . 189 parts In-Stock

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Northwest PG Solutions

USA . 45 parts In-Stock

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Overview

Elevate your electronic projects with the BU806AN by Onsemi, a top-quality Power Bipolar Junction Transistor designed for amplification applications. Manufactured by Onsemi, a trusted industry leader known for their innovative and reliable components, this NPN transistor offers exceptional performance and efficiency. With a built-in diode and resistor in a convenient rectangular package, this transistor provides added value and convenience for your projects. Experience the benefits of high DC current gain, a maximum collector-emitter voltage of 200V, and a maximum collector current of 8A. Upgrade your designs today with the BU806AN and unlock endless possibilities in amplification technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and mechanical protection for the transistor, ensuring reliability in a variety of operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier circuits due to their high input impedance and low output impedance, making this transistor suitable for amplifier applications.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration offers high current gain and low saturation voltage, while the built-in diode and resistor provide added protection and functionality in amplifier applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and efficiency in amplifying electronic signals.

Minimum DC Current Gain (hFE): 100

High DC current gain ensures that small base currents can control larger collector currents, making the transistor highly efficient in amplifier circuits.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance, ideal for applications where heat dissipation is a concern.

Maximum Collector-Emitter Voltage: 200 V

Can handle high voltage inputs, making it suitable for amplifier circuits with varying input voltages.

Transistor Element Material: SILICON

Silicon transistors offer high reliability, low leakage currents, and high switching speeds, contributing to the overall performance of the transistor.

Maximum Collector Current (IC): 8 A

With a high collector current rating, this transistor can handle large output currents in amplifier circuits without overheating or failing.

Terminal Finish: TIN LEAD

Provides good solderability and conductivity, ensuring reliable connections between the transistor and external circuit components.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BU806AN attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

200 V

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BU806AN Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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