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BU806BA

Onsemi

BU806BA by Onsemi

BU806BA by Onsemi is a NPN Darlington transistor with built-in diode and resistor, ideal for amplifier applications. It offers a min DC current gain of 100 (hFE), max operating temperature of 150 °C, and max collector-emitter voltage of 200V. This power BJT has a max collector current of 8A and comes in a rectangular package style with through-hole terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,367 parts In-Stock

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Vyrian

USA . 947 parts In-Stock

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947

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Native Components

USA . 121 parts In-Stock

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$106.980

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$102.701

121

$106.980

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$102.701

Northwest PG Solutions

USA . 2,234 parts In-Stock

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$117.678

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$117.678

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Problanco Electronics

Mexico . 7,865 parts In-Stock

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TANS Electronics

Latvia . 6,237 parts In-Stock

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Corphita

USA . 1,692 parts In-Stock

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1,692

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SupplyDigital Components

Austria . 1,576 parts In-Stock

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Kulean Microsystems

USA . 902 parts In-Stock

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UHIMA Technologies

Türkiye . 579 parts In-Stock

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Corohmni

South Africa . 57 parts In-Stock

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Overview

Unleash the power of innovation with the BU806BA by Onsemi. Crafted with precision and expertise, this Power Bipolar Junction Transistor (BJT) embodies quality and reliability. Perfect for amplifier applications, this NPN transistor features a unique Darlington configuration with a built-in diode and resistor, ensuring optimal performance. With a maximum operating temperature of 150 °C and a collector-emitter voltage of 200V, the BU806BA offers unmatched value and benefits to customers. Elevate your projects with the superior technology and efficiency that Onsemi brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring durability and long-term performance.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration offers high current gain, while the built-in diode and resistor facilitate easy integration into circuits.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in such circuits.

Terminal Form: THROUGH-HOLE

Easy to solder onto a PCB or breadboard, making it convenient for prototyping and DIY projects.

Maximum Collector-Emitter Voltage: 200 V

High maximum voltage rating allows for use in a variety of high-power applications without risk of damage.

Maximum Collector Current (IC): 8 A

Capable of handling high currents, making it suitable for power amplification and other high-power applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BU806BA attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

200 V

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BU806BA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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