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BU806AU

Onsemi

BU806AU by Onsemi

BU806AU by Onsemi is a NPN Darlington BJT with built-in diode and resistor, ideal for amplifier applications. It features a max collector-emitter voltage of 200V, max collector current of 8A, and min DC current gain of 100. The package style is flange mount with through-hole terminals in a rectangular shape.

Median Price

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2

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1k+

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Digiode

USA . 2,053 parts In-Stock

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Vyrian

USA . 831 parts In-Stock

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SupplyDigital Components

Austria . 7,656 parts In-Stock

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Problanco Electronics

Mexico . 6,409 parts In-Stock

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TANS Electronics

Latvia . 5,376 parts In-Stock

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Kulean Microsystems

USA . 2,801 parts In-Stock

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Northwest PG Solutions

USA . 1,158 parts In-Stock

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Corohmni

South Africa . 288 parts In-Stock

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Corphita

USA . 231 parts In-Stock

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Native Components

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UHIMA Technologies

Türkiye . 191 parts In-Stock

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Overview

Unleash the power of innovation with the BU806AU by Onsemi! Crafted with precision and expertise, this Power Bipolar Junction Transistor embodies quality and reliability. Ideal for amplifier applications, this NPN transistor boasts a unique Darlington configuration with a built-in diode and resistor. With a maximum collector-emitter voltage of 200V and a maximum collector current of 8A, this transistor guarantees optimal performance even in challenging conditions. Elevate your projects with the BU806AU and experience unparalleled efficiency and functionality. Choose Onsemi for superior quality and unmatched value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the transistor.

Polarity or Channel Type: NPN

Commonly used in amplification circuits and compatible with a wide range of applications.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Offers convenience and efficiency by integrating additional components in one package.

Transistor Application: AMPLIFIER

Specifically designed for use in amplification circuits, ensuring optimum performance.

Package Shape: RECTANGULAR

Allows for easy and secure mounting in various electronic devices.

Terminal Form: THROUGH-HOLE

Enables simple and reliable soldering onto circuit boards.

No. of Terminals: 3

Provides necessary connections for proper transistor functioning.

Package Style (Meter): FLANGE MOUNT

Facilitates installation and maintenance in electronic equipment.

Minimum DC Current Gain (hFE): 100

Ensures stable and consistent amplification in the circuit.

Maximum Operating Temperature: 150 °C

Can withstand high temperature environments, enhancing reliability.

Maximum Collector-Emitter Voltage: 200 V

Suitable for circuits requiring higher voltage handling capabilities.

Transistor Element Material: SILICON

Offers high performance and reliability compared to other materials.

Maximum Collector Current (IC): 8 A

Capable of handling high current loads in amplification circuits.

Terminal Finish: TIN LEAD

Provides a good soldering surface for secure connections.

Terminal Position: SINGLE

Simplifies circuit design and connection layout.

Case Connection: COLLECTOR

Helps ensure proper and efficient current flow in the circuit.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BU806AU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

200 V

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BU806AU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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