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BU806BC

Onsemi

BU806BC by Onsemi

BU806BC by Onsemi is a NPN BJT with Darlington configuration, ideal for amplifier applications. It features a hFE of 100, VCE of 200V, and IC of 8A. The transistor is housed in a plastic/epoxy package with through-hole terminals and can operate up to 150 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,424 parts In-Stock

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Digiode

USA . 944 parts In-Stock

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Native Components

USA . 876 parts In-Stock

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$49.910

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$47.914

876

$49.910

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$47.914

Northwest PG Solutions

USA . 341 parts In-Stock

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$54.901

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Kulean Microsystems

USA . 5,371 parts In-Stock

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TANS Electronics

Latvia . 3,896 parts In-Stock

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SupplyDigital Components

Austria . 2,737 parts In-Stock

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Problanco Electronics

Mexico . 2,402 parts In-Stock

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Corphita

USA . 1,248 parts In-Stock

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UHIMA Technologies

Türkiye . 488 parts In-Stock

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Corohmni

South Africa . 88 parts In-Stock

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Overview

Discover the BU806BC by Onsemi, a high-quality Power Bipolar Junction Transistor that offers exceptional performance and reliability. Manufactured by Onsemi, a renowned leader in semiconductor solutions, this NPN transistor is perfect for amplifier applications. With a built-in diode and resistor, it provides added convenience and efficiency. The BU806BC boasts a minimum DC current gain of 100 and a maximum operating temperature of 150 °C, making it a versatile and durable choice for various projects. Upgrade your designs with the BU806BC and experience the benefits of superior quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it durable and reliable.

Polarity or Channel Type: NPN

Commonly used type of transistor that offers high efficiency and low noise operation.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Integrated diode and resistor provide added functionality and convenience in circuit design.

Transistor Application: AMPLIFIER

Designed specifically for amplification applications, ensuring high performance.

Package Shape: RECTANGULAR

Compact and easy to mount, suitable for various electronic devices.

Terminal Form: THROUGH-HOLE

Allows for easy manual soldering and connection to a circuit board.

No. of Terminals: 3

Simplified connection setup for basic amplifier circuits.

Package Style (Meter): FLANGE MOUNT

Securely mounts the transistor in place for stable performance.

Minimum DC Current Gain (hFE): 100

Ensures reliable and consistent gain in amplification scenarios.

Maximum Operating Temperature: 150 °C

Can operate efficiently even at high temperatures, suitable for various environments.

Maximum Collector-Emitter Voltage: 200 V

Can handle high voltage applications with ease.

Transistor Element Material: SILICON

Provides high performance and reliability in electronic circuits.

Maximum Collector Current (IC): 8 A

Capable of handling high currents for demanding applications.

Terminal Finish: TIN LEAD

Ensures good conductivity and solderability for easy installation.

Terminal Position: SINGLE

Simplified connection setup for basic amplifier circuits.

Case Connection: COLLECTOR

A common and convenient connection point for the circuit.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BU806BC attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

200 V

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BU806BC Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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