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STX0560

STMicroelectronics

STX0560 by STMicroelectronics

STX0560 by STMicroelectronics is a NPN BJT transistor with 600V VCE, 1A IC, and 1.5W power dissipation. Ideal for switching applications due to its single configuration in a cylindrical package with matte tin finish.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 2,550 parts In-Stock

1+ parts

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2,550

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Vyrian

USA . 2,299 parts In-Stock

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2,299

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Digiode

USA . 2,067 parts In-Stock

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2,067

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 705 parts In-Stock

1+ parts

$0.343

100+ parts

-

1k+ parts

$0.309

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705

$0.343

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$0.309

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MKK Technologies

India . 475 parts In-Stock

1+ parts

$0.645

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-

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475

$0.645

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DigiPath Technology Company

USA . 475 parts In-Stock

1+ parts

$0.645

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475

$0.645

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Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$1.133

100+ parts

$1.031

1k+ parts

$0.929

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100

$1.133

$1.031

$0.929

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AZTECH Wire

Italy . 935 parts In-Stock

1+ parts

$13.230

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935

$13.230

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Component Stockers USA

USA . 471 parts In-Stock

1+ parts

$99.990

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471

$99.990

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Corphita

USA . 4,636 parts In-Stock

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4,636

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Alle Elektronik GmbH

Germany . 4,477 parts In-Stock

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4,477

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Perfect Parts

USA . 3,600 parts In-Stock

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3,600

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Parana Technologies

USA . 2,141 parts In-Stock

1+ parts

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100+ parts

$0.410

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2,141

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$0.410

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Overview

Elevate your power management solutions with the STX0560 by STMicroelectronics. Crafted with precision and expertise, this Power Bipolar Junction Transistor offers unmatched quality and reliability. Whether you're in need of a switching component for your electronics project or looking to optimize power efficiency in your systems, the STX0560 delivers exceptional performance. Trust in STMicroelectronics to provide you with cutting-edge technology that brings value and innovation to your designs. Experience the difference with the STX0560 today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation properties and allows for easy handling and mounting of the transistor.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this transistor versatile for various applications.

Configuration: SINGLE

A single configuration simplifies circuit design and makes integration easier.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in such scenarios.

Package Shape: ROUND

Round package shape allows for easy mounting and alignment in circular layouts.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide sturdy connections and are commonly preferred for robust circuit assemblies.

No. of Terminals: 3

The three terminals allow for control over current flow and voltage regulation in the circuit.

Maximum Power Dissipation (Abs): 1.5 W

High power dissipation capability ensures the transistor can handle moderate loads without overheating.

Package Style (Meter): CYLINDRICAL

Cylindrical package style provides uniform heat dissipation and optimal space utilization in circuit layouts.

Minimum DC Current Gain (hFE): 70

A minimum DC current gain of 70 ensures adequate amplification of input signals for desired output.

Maximum Operating Temperature: 150 °C

The ability to operate at up to 150 °C makes this transistor suitable for high-temperature environments and applications.

Maximum Collector-Emitter Voltage: 600 V

High maximum voltage rating allows the transistor to handle higher voltage levels in the circuit without breakdown.

Transistor Element Material: SILICON

Silicon-based transistors offer good performance characteristics and reliability over a wide range of operating conditions.

Maximum Collector Current (IC): 1 A

Capable of handling up to 1A collector current, making it suitable for moderate power applications.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and ensures reliable electrical connections during assembly.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy PCB mounting and integration into the circuit layout.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STX0560 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

600 V

Configuration:

Minimum DC Current Gain (hFE):

70

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STX0560 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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