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TRD136DT4

STMicroelectronics

TRD136DT4 by STMicroelectronics

STMicroelectronics TRD136DT4 is a NPN BJT transistor with 400V VCE, 3A IC, and 20W power dissipation. Ideal for switching applications due to its built-in diode and hFE of 10. Its small outline package makes it suitable for surface mount designs in various electronic systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,773 parts In-Stock

1+ parts

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5,773

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R&J Components

USA . 2,165 parts In-Stock

1+ parts

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2,165

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Anansix

USA . 1,090 parts In-Stock

1+ parts

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1,090

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Digiode

USA . 880 parts In-Stock

1+ parts

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880

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 10 parts In-Stock

1+ parts

$0.293

100+ parts

-

1k+ parts

$0.264

10k+ parts

-

10

$0.293

-

$0.264

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MKK Technologies

India . 1,896 parts In-Stock

1+ parts

$0.552

100+ parts

-

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1,896

$0.552

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DigiPath Technology Company

USA . 1,896 parts In-Stock

1+ parts

$0.552

100+ parts

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1,896

$0.552

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Advanced Electronics

New Zealand . 42 parts In-Stock

1+ parts

$2.354

100+ parts

$2.142

1k+ parts

$1.930

10k+ parts

-

42

$2.354

$2.142

$1.930

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AZTECH Wire

Italy . 423 parts In-Stock

1+ parts

$10.180

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-

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423

$10.180

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Component Stockers USA

USA . 797 parts In-Stock

1+ parts

$99.990

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797

$99.990

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Perfect Parts

USA . 5,253 parts In-Stock

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5,253

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Alle Elektronik GmbH

Germany . 4,750 parts In-Stock

1+ parts

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4,750

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Parana Technologies

USA . 1,614 parts In-Stock

1+ parts

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$0.351

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1,614

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$0.351

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Corphita

USA . 834 parts In-Stock

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834

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Overview

Experience the power of reliable performance with the TRD136DT4 from STMicroelectronics. As a trusted manufacturer in the industry, STMicroelectronics delivers top-quality Power Bipolar Junction Transistors (BJT) like no other. This NPN transistor with a built-in diode is perfect for switching applications, offering a maximum collector-emitter voltage of 400V and a maximum collector current of 3A. With a small outline package style and gull wing terminal form, this transistor is designed for easy integration and efficient operation. Trust STMicroelectronics to provide you with the best in semiconductor technology for all your power needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this product versatile.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and can help protect against reverse voltage spikes.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in high-speed switching circuits.

Surface Mount: YES

Enables easy and efficient placement on PCBs, saving space and simplifying manufacturing processes.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient use of board space and easy integration into circuit designs.

Terminal Form: GULL WING

Gull wing terminals provide secure connections and ease of soldering during PCB assembly.

Maximum Power Dissipation (Abs): 20 W

High power dissipation capability allows for reliable operation even in demanding applications.

Minimum DC Current Gain (hFE): 10

A minimum DC current gain of 10 ensures consistent and stable amplification of the input signal.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures, making it suitable for a wide range of industrial and automotive applications.

Maximum Collector-Emitter Voltage: 400 V

High collector-emitter voltage rating provides a wide margin of safety in high voltage circuits.

Transistor Element Material: SILICON

Silicon transistors offer high performance, low noise, and good reliability, making them ideal for various applications.

Maximum Collector Current (IC): 3 A

High collector current rating allows for handling high current loads without overheating.

Terminal Position: SINGLE

Single terminal position simplifies circuit layout and connections, improving overall design efficiency.

Technical Specifications

Power Bipolar Junction Transistors (BJT) TRD136DT4 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

400 V

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

TRD136DT4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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