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BULT118

STMicroelectronics

BULT118 by STMicroelectronics

STMicroelectronics BULT118 is a NPN Power BJT with 400V VCE, 2A IC, and 1.5V VCEsat. Ideal for switching applications, it has a max power dissipation of 45W at 150 °C ambient temp. Package: PLASTIC/EPOXY RECTANGULAR with THROUGH-HOLE terminals in FLANGE MOUNT style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,489 parts In-Stock

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8,489

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Digiode

USA . 4,396 parts In-Stock

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4,396

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Anansix

USA . 2,079 parts In-Stock

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2,079

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 584 parts In-Stock

1+ parts

$1.404

100+ parts

-

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$1.264

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584

$1.404

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$1.264

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MKK Technologies

India . 264 parts In-Stock

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$2.640

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-

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264

$2.640

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DigiPath Technology Company

USA . 264 parts In-Stock

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$2.640

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264

$2.640

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AZTECH Wire

Italy . 285 parts In-Stock

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$16.720

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285

$16.720

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Ampacity Inc.

Singapore . 981 parts In-Stock

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$48.050

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981

$48.050

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Component Stockers USA

USA . 260 parts In-Stock

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$99.990

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260

$99.990

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Kepictronics

USA . 27,860 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,556 parts In-Stock

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Corphita

USA . 3,548 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,037 parts In-Stock

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Parana Technologies

USA . 1,396 parts In-Stock

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$1.679

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$1.679

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Northwest PG Solutions

USA . 491 parts In-Stock

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Native Components

USA . 121 parts In-Stock

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Overview

Experience superior performance and reliability with the BULT118 by STMicroelectronics, a top-quality Power Bipolar Junction Transistor perfect for switching applications. With a maximum VCEsat of 1.5V and a maximum collector current of 2A, this NPN transistor offers unparalleled efficiency and power dissipation capabilities. Its durable plastic/epoxy package body and through-hole terminals ensure long-lasting stability and easy installation. Trust STMicroelectronics for cutting-edge technology and innovative solutions in the realm of power transistors. Elevate your projects with the BULT118 and unlock endless possibilities in power management.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-term reliability.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications, making this transistor versatile for a variety of electronic circuits.

Configuration: SINGLE

Simplifies circuit design and makes it easier to integrate into existing systems.

Transistor Application: SWITCHING

Optimized for fast switching speeds, making it suitable for applications that require rapid on/off transitions.

Maximum VCEsat: 1.5 V

Low VCEsat helps reduce power losses and improves efficiency in switching applications.

Package Shape: RECTANGULAR

Easily mountable and integrates well into circuit designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections to the circuit board, ensuring stable operation.

Maximum Power Dissipation (Abs): 40 W

Can handle high power dissipation, making it suitable for applications with high power requirements.

Package Style (Meter): FLANGE MOUNT

Flange mount package style offers easy installation and heat dissipation.

Maximum Power Dissipation Ambient: 45 W

Capable of dissipating heat efficiently, ensuring reliable operation in varying ambient conditions.

Minimum DC Current Gain (hFE): 8

A higher DC current gain allows for amplification of weak signals, enhancing the transistor's performance.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures, suitable for industrial or automotive applications.

Maximum Collector-Emitter Voltage: 400 V

Higher collector-emitter voltage rating offers flexibility in circuit design and compatibility with various systems.

Transistor Element Material: SILICON

Silicon transistors offer high reliability and performance in electronic circuits.

Maximum Collector Current (IC): 2 A

Can handle higher currents, making it suitable for applications that require high power switching.

Maximum Turn Off Time (toff): 4900 ns

Fast turn-off time ensures quick switching speeds, essential for applications with rapid switching requirements.

Terminal Finish: TIN LEAD

Tin-lead terminal finish provides good conductivity and solderability for reliable connections.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection to the circuit board.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BULT118 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

8

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

45 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

4900 ns

Maximum VCEsat:

1.5 V

Trade Compliance

BULT118 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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