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BULT3N4

STMicroelectronics

BULT3N4 by STMicroelectronics

BULT3N4 by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max power dissipation of 32W, operates up to 150 °C, and supports a collector-emitter voltage of 200V. Ideal for efficient circuit designs with through-hole mounting.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,492 parts In-Stock

1+ parts

-

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3,492

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Anansix

USA . 2,149 parts In-Stock

1+ parts

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2,149

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Digiode

USA . 1,157 parts In-Stock

1+ parts

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1,157

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,787 parts In-Stock

1+ parts

$0.821

100+ parts

-

1k+ parts

$0.739

10k+ parts

-

1,787

$0.821

-

$0.739

-

MKK Technologies

India . 741 parts In-Stock

1+ parts

$1.543

100+ parts

-

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741

$1.543

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DigiPath Technology Company

USA . 741 parts In-Stock

1+ parts

$1.543

100+ parts

-

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741

$1.543

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Corphita

USA . 2,310 parts In-Stock

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2,310

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Native Components

USA . 929 parts In-Stock

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929

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Parana Technologies

USA . 748 parts In-Stock

1+ parts

-

100+ parts

$0.981

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748

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$0.981

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Northwest PG Solutions

USA . 407 parts In-Stock

1+ parts

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407

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Kepictronics

USA . 100 parts In-Stock

1+ parts

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100

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Overview

Experience unparalleled performance with the BULT3N4 by STMicroelectronics, a trusted name in the industry renowned for superior quality and innovation. This NPN power BJT excels in switching applications, offering reliability and efficiency that elevate your projects. With its sturdy plastic/epoxy package and impressive power dissipation capabilities, it’s designed for demanding environments. Choose the BULT3N4 to unlock exceptional value and performance in every application!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy provides durability and resistance to environmental factors, making the transistor reliable for various applications.

Polarity or Channel Type: NPN

NPN transistors are widely used in high-speed switching applications, making this product ideal for efficient circuit designs.

Configuration: SINGLE

A single configuration simplifies circuit design while ensuring effective performance in switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can handle rapid on/off states, enhancing overall circuit efficiency.

Package Shape: RECTANGULAR

The rectangular shape allows for optimal space utilization in PCB layouts, contributing to compact designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical connections and are ideal for high-stress environments and robust applications.

No. of Terminals: 3

A 3-terminal design simplifies connection and functionality, allowing for easier integration into circuits.

Maximum Power Dissipation (Abs): 32 W

With a maximum power dissipation of 32W, this transistor can manage high power levels efficiently, suitable for demanding applications.

Package Style (Meter): FLANGE MOUNT

Flange mount style enhances thermal performance and supports better heat dissipation, ensuring reliability under load.

Minimum DC Current Gain (hFE): 4

A minimum DC current gain of 4 ensures adequate amplification, making it suitable for various analog applications.

Maximum Operating Temperature: 150 °C

The ability to operate at up to 150 °C allows for versatility in harsh environments without compromising performance.

Maximum Collector-Emitter Voltage: 200 V

A maximum voltage rating of 200V makes this transistor ideal for high-voltage applications, ensuring reliable operation under various conditions.

Transistor Element Material: SILICON

Silicon as the element material ensures good thermal stability and performance, making it a preferred choice for BJTs.

Maximum Collector Current (IC): 3 A

Capable of handling up to 3A of collector current, this transistor meets the demands of high-current applications efficiently.

Terminal Finish: MATTE TIN

Matte tin finish ensures good solderability and corrosion resistance, enhancing the longevity of the connections.

Terminal Position: SINGLE

A single terminal position simplifies the design process and installation, making it user-friendly and efficient.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BULT3N4 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

200 V

Configuration:

Minimum DC Current Gain (hFE):

4

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BULT3N4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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