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TRD236DT4

STMicroelectronics

TRD236DT4 by STMicroelectronics

STMicroelectronics TRD236DT4 is a NPN BJT transistor with 400V VCEO and 4A IC. It has a max power dissipation of 35W, hFE of 8, and operates up to 150 °C. Ideal for switching applications in surface mount designs due to its small outline package and built-in diode configuration.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,523 parts In-Stock

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7,523

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R&J Components

USA . 2,470 parts In-Stock

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2,470

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Anansix

USA . 884 parts In-Stock

1+ parts

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884

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Digiode

USA . 384 parts In-Stock

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384

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,780 parts In-Stock

1+ parts

$0.864

100+ parts

-

1k+ parts

$0.777

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1,780

$0.864

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$0.777

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MKK Technologies

India . 1,270 parts In-Stock

1+ parts

$1.624

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1,270

$1.624

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DigiPath Technology Company

USA . 1,270 parts In-Stock

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$1.624

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1,270

$1.624

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AZTECH Wire

Italy . 400 parts In-Stock

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$14.640

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400

$14.640

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Ampacity Inc.

Singapore . 995 parts In-Stock

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$29.050

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995

$29.050

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Perfect Parts

USA . 5,376 parts In-Stock

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5,376

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Alle Elektronik GmbH

Germany . 3,614 parts In-Stock

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3,614

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Corphita

USA . 3,611 parts In-Stock

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3,611

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Parana Technologies

USA . 1,872 parts In-Stock

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$1.033

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1,872

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$1.033

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Overview

Unlock the power of innovation with the TRD236DT4 by STMicroelectronics. As a leader in Power Bipolar Junction Transistors, STMicroelectronics delivers unparalleled quality and reliability. This NPN transistor with built-in diode is perfect for switching applications, offering a maximum collector-emitter voltage of 400V and a maximum collector current of 4A. With a small outline package and gull wing terminals, this transistor is designed for easy surface mounting. Trust STMicroelectronics to provide you with the ultimate solution for your power needs, ensuring maximum performance and efficiency in every application.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, making this transistor versatile.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and can protect against reverse polarity.

Transistor Application: SWITCHING

Designed for efficient switching operations, making it suitable for various electronic applications.

Surface Mount: YES

Easily mountable on circuit boards, saving space and allowing for automated assembly processes.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient placement on circuit boards and wiring.

Terminal Form: GULL WING

Gull wing terminals provide secure connections and easy soldering during assembly.

Maximum Power Dissipation (Abs): 35 W

Capable of handling high power dissipation, making it suitable for demanding applications.

Package Style (Meter): SMALL OUTLINE

Compact size saves space on the board and allows for denser circuit designs.

Minimum DC Current Gain (hFE): 8

A minimum hFE value of 8 ensures reliable amplification in the circuit.

Maximum Operating Temperature: 150 °C

Can operate efficiently at high temperatures, suitable for harsh environments.

Maximum Collector-Emitter Voltage: 400 V

Can handle high voltage levels, increasing the range of applications it can be used in.

Transistor Element Material: SILICON

Silicon transistors offer good performance and reliability in electronic circuits.

Maximum Collector Current (IC): 4 A

Capable of handling high collector currents, making it suitable for power switching applications.

Terminal Position: SINGLE

Single terminal position simplifies circuit connections and integration.

Technical Specifications

Power Bipolar Junction Transistors (BJT) TRD236DT4 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

400 V

Minimum DC Current Gain (hFE):

8

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

TRD236DT4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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