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ESM2012DV

STMicroelectronics

ESM2012DV by STMicroelectronics

ESM2012DV by STMicroelectronics is an NPN BJT with a Darlington configuration and built-in diode, ideal for switching applications. It has a max VCEsat of 2V, can handle a collector current of 120A, and dissipate up to 175W. With an operating temperature of 150 °C, it's suitable for high-power industrial applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,708 parts In-Stock

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3,708

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Anansix

USA . 1,972 parts In-Stock

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Digiode

USA . 488 parts In-Stock

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488

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Fibra_Brandt Electronic GMBH

Germany . 13 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 4 parts In-Stock

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Sinequanon

UK . 2 parts In-Stock

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IDEA Electronic Components Group

UK . 411 parts In-Stock

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$0.684

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$0.615

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411

$0.684

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$0.615

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Native Components

USA . 172 parts In-Stock

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$0.809

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172

$0.809

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Northwest PG Solutions

USA . 760 parts In-Stock

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$0.890

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760

$0.890

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MKK Technologies

India . 822 parts In-Stock

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$1.285

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$1.285

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DigiPath Technology Company

USA . 822 parts In-Stock

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$1.285

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822

$1.285

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AZTECH Wire

Italy . 640 parts In-Stock

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$16.390

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$16.390

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Component Stockers USA

USA . 265 parts In-Stock

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$99.990

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Alle Elektronik GmbH

Germany . 4,691 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 3,887 parts In-Stock

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Corphita

USA . 2,047 parts In-Stock

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Parana Technologies

USA . 420 parts In-Stock

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$0.817

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Assy Fe

Spain . 8 parts In-Stock

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Overview

Unleash the power of innovation with the ESM2012DV by STMicroelectronics. As a leading manufacturer, STMicroelectronics delivers top-notch quality and reliability in the Power Bipolar Junction Transistors (BJT) category. Ideal for switching applications, this NPN Darlington transistor with built-in diode offers unmatched performance and efficiency. With a maximum VCEsat of 2V and a maximum power dissipation of 175W, customers can trust in the durability and functionality of this product. Experience seamless operation and enhanced productivity with the ESM2012DV, setting new standards in the industry.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this product versatile.

Configuration: DARLINGTON WITH BUILT-IN DIODE

The Darlington configuration provides high current gain and the built-in diode offers protection against back EMF, enhancing the reliability of the product.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers high performance and efficiency in such scenarios.

Maximum VCEsat: 2 V

Lower VCEsat indicates lower power dissipation and higher efficiency when the transistor is conducting, leading to energy savings.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy handling and mounting of the transistor in various electronic circuits.

Maximum Fall Time (tf): 300 ns

Fast fall time ensures quick switching speeds, ideal for applications where rapid response is required.

Maximum Power Dissipation (Abs): 175 W

High power dissipation capability allows the transistor to handle large amounts of power, making it suitable for high-power applications.

Package Style (Meter): FLANGE MOUNT

Flange mount package style provides secure and stable mounting, ensuring reliability in various operating conditions.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without sacrificing performance.

Maximum Collector-Emitter Voltage: 125 V

The high collector-emitter voltage rating allows the transistor to handle higher voltage levels, expanding its usability in different circuits.

Transistor Element Material: SILICON

Silicon is a widely used material in transistors due to its excellent electrical properties and reliability, ensuring long-term performance.

Maximum Collector Current (IC): 120 A

High collector current rating enables the transistor to handle large currents, suitable for heavy-duty applications.

Terminal Finish: NICKEL

Nickel terminal finish provides corrosion resistance and excellent conductivity, ensuring reliable connections.

Terminal Position: UPPER

Upper terminal position simplifies the installation and connection of the transistor in circuits, improving user-friendliness.

Case Connection: ISOLATED

Isolated case connection helps prevent electrical interference and improves the overall stability and performance of the transistor.

Technical Specifications

Power Bipolar Junction Transistors (BJT) ESM2012DV attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

125 V

Maximum Fall Time (tf):

300 ns

JESD-30 Code:

R-XUFM-X4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

175 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Power

Surface Mount:

NO

Terminal Finish:

NICKEL

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

2 V

Trade Compliance

ESM2012DV Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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