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BDX53BFP

STMicroelectronics

BDX53BFP by STMicroelectronics

BDX53BFP by STMicroelectronics is a power bipolar junction transistor (BJT) with NPN polarity. It has a max VCEsat of 2V and can handle a max collector current (IC) of 8A. This transistor is commonly used for switching applications.

Median Price

$0.472

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 300 parts In-Stock

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$0.472

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300

$0.472

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Vyrian

USA . 6,137 parts In-Stock

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6,137

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VNN

France . 3,611 parts In-Stock

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3,611

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Digiode

USA . 3,384 parts In-Stock

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3,384

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Chip Stock

USA . 2,580 parts In-Stock

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2,580

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Anansix

USA . 1,376 parts In-Stock

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1,376

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ComSIT Distribution GmbH

Germany . 900 parts In-Stock

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900

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Huijzer Components

Netherlands . 77 parts In-Stock

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77

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Holdelec - ElecDif-Pro

France . 50 parts In-Stock

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50

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Zilex Electronics Inc.

Canada . 35 parts In-Stock

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35

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ACDS - Activité Composants Distribution Service

France . 30 parts In-Stock

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30

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,052 parts In-Stock

1+ parts

$0.440

100+ parts

-

1k+ parts

$0.396

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1,052

$0.440

-

$0.396

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Continental Prestige Electronics

USA . 4,198 parts In-Stock

1+ parts

$0.472

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$0.463

4,198

$0.472

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$0.463

Argo Parts USA

USA . 1,720 parts In-Stock

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$0.472

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$0.458

1,720

$0.472

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$0.458

MKK Technologies

India . 1,587 parts In-Stock

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$0.827

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1,587

$0.827

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DigiPath Technology Company

USA . 1,587 parts In-Stock

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$0.827

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1,587

$0.827

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Ampacity Inc.

Singapore . 760 parts In-Stock

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$2.050

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760

$2.050

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AZTECH Wire

Italy . 702 parts In-Stock

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$11.726

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702

$11.726

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A-Z Elektronik GmbH

Germany . 4,971 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,314 parts In-Stock

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3,314

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Corphita

USA . 1,842 parts In-Stock

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1,842

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Parana Technologies

USA . 752 parts In-Stock

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$0.526

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752

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$0.526

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Perfect Parts

USA . 627 parts In-Stock

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627

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Netroflash

USA . 500 parts In-Stock

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$0.463

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$0.448

10k+ parts

$0.439

500

-

$0.463

$0.448

$0.439

Cyclops Electronics Ltd (Excess)

UK . 280 parts In-Stock

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280

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Kepictronics

USA . 48 parts In-Stock

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48

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Overview

Discover the BDX53BFP by STMicroelectronics, a high-quality Power Bipolar Junction Transistor that brings exceptional value to your projects. With its NPN polarity and Darlington configuration, this transistor is perfect for switching applications. Designed with a built-in diode and resistor, it offers convenience and versatility. Its maximum power dissipation of 25W ensures durability, while the maximum collector-emitter voltage of 80V guarantees reliable performance. Whether you're working on industrial automation or consumer electronics, the BDX53BFP delivers outstanding results. Trust in STMicroelectronics' reputation as a leading manufacturer and elevate your designs with this advanced transistor.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and provides good protection for the transistor, making it a reliable choice for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering good performance and versatility.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration provides high gain and low saturation voltage, while the built-in diode and resistor offer convenient additional features.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and efficient performance.

Maximum VCEsat: 2 V

Low VCEsat ensures minimal power loss, making this transistor energy efficient and suitable for high-speed switching.

Package Shape: RECTANGULAR

The rectangular shape allows for easy mounting and integration into various electronic devices and circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure and reliable connection, making installation and soldering processes easier.

Maximum Power Dissipation (Abs): 25 W

With a high power dissipation capability, this transistor can handle heavy loads and maintain reliable operation.

Package Style (Meter): FLANGE MOUNT

The flange mount package style offers mechanical stability and heat dissipation, enhancing the overall reliability of the transistor.

Maximum Power Dissipation Ambient: 29 W

The high ambient power dissipation rating ensures that the transistor can operate efficiently even in challenging environmental conditions.

Minimum DC Current Gain (hFE): 750

High DC current gain ensures accurate amplification and reliable performance in various circuit designs.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures and harsh operating environments.

Maximum Collector-Emitter Voltage: 80 V

With a high collector-emitter voltage rating, this transistor can handle high voltage applications with ease.

Transistor Element Material: SILICON

Silicon transistors offer good performance characteristics and are commonly used in various electronic applications.

Maximum Collector Current (IC): 8 A

With a high maximum collector current rating, this transistor can handle high current loads without issues.

Terminal Finish: MATTE TIN

Matte tin finish on the terminals ensures good solderability and corrosion resistance, enhancing the overall reliability of the transistor.

Terminal Position: SINGLE

Single terminal position simplifies installation and wiring processes, making it easier to integrate the transistor into electronic circuits.

Case Connection: ISOLATED

Isolated case connection provides electrical insulation and prevents leakage currents, ensuring safe and reliable operation of the transistor.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BDX53BFP attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

80 V

Minimum DC Current Gain (hFE):

750

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

29 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

2 V

Trade Compliance

BDX53BFP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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