Loading...

SGSD100

STMicroelectronics

SGSD100 by STMicroelectronics

STMicroelectronics SGSD100 is a NPN BJT with Darlington configuration, built-in diode and resistor. Ideal for switching applications with max VCEsat of 3.5V, hFE of 300, and IC of 25A. Operates up to 150 °C, with max power dissipation of 130W in a rectangular package suitable for flange mount.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,963 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,963

-

-

-

-

Digiode

USA . 2,492 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,492

-

-

-

-

Anansix

USA . 1,747 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,747

-

-

-

-

LIBRA Elektronik GmbH

Germany . 1,700 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,700

-

-

-

-

GES GmbH

Germany . 1 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,691 parts In-Stock

1+ parts

$0.999

100+ parts

-

1k+ parts

$0.899

10k+ parts

-

1,691

$0.999

-

$0.899

-

MKK Technologies

India . 1,208 parts In-Stock

1+ parts

$1.879

100+ parts

-

1k+ parts

-

10k+ parts

-

1,208

$1.879

-

-

-

DigiPath Technology Company

USA . 1,208 parts In-Stock

1+ parts

$1.879

100+ parts

-

1k+ parts

-

10k+ parts

-

1,208

$1.879

-

-

-

AZTECH Wire

Italy . 734 parts In-Stock

1+ parts

$17.850

100+ parts

-

1k+ parts

-

10k+ parts

-

734

$17.850

-

-

-

Kepictronics

USA . 13,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

13,000

-

-

-

-

Corphita

USA . 3,678 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,678

-

-

-

-

Alle Elektronik GmbH

Germany . 3,457 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,457

-

-

-

-

Parana Technologies

USA . 995 parts In-Stock

1+ parts

-

100+ parts

$1.195

1k+ parts

-

10k+ parts

-

995

-

$1.195

-

-

Overview

Unleash the power of innovation with the SGSD100 from STMicroelectronics. As a leader in the industry, STMicroelectronics delivers top-notch quality and reliability in their Power Bipolar Junction Transistors (BJT). Perfect for switching applications, this NPN transistor boasts a Darlington configuration with a built-in diode and resistor, providing unmatched performance. With a maximum power dissipation of 130W and a minimum DC current gain of 300, this transistor is designed to exceed expectations. Elevate your projects with the SGSD100 and experience the difference that STMicroelectronics brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring durability and reliability.

Polarity or Channel Type: NPN

Commonly used type of transistor for general purpose applications, making it versatile.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration offers high current gain, while the built-in diode and resistor simplify circuit design.

Transistor Application: SWITCHING

Designed for efficient switching applications, providing fast on/off response.

Maximum VCEsat: 3.5 V

Low VCEsat value indicates minimal voltage drop across the transistor when conducting, resulting in high efficiency.

Package Shape: RECTANGULAR

Easily mountable and compatible with standard circuit layouts.

Terminal Form: THROUGH-HOLE

Offers secure and stable connections for through-hole soldering.

No. of Terminals: 3

Simplified connection setup with only three terminals to work with.

Package Style (Meter): FLANGE MOUNT

Enhanced mechanical support for mounting in various applications.

Maximum Power Dissipation Ambient: 130 W

Capable of handling high power levels without overheating, suitable for demanding applications.

Minimum DC Current Gain (hFE): 300

High current gain allows for smaller base current requirements and better amplification capabilities.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without performance degradation, ensuring reliability in various environments.

Maximum Collector-Emitter Voltage: 80 V

Provides a sufficient voltage rating for a wide range of applications.

Transistor Element Material: SILICON

Silicon material offers reliable and consistent performance over a wide temperature range.

Maximum Collector Current (IC): 25 A

High collector current rating allows for handling large currents, making it suitable for power applications.

Terminal Finish: TIN

Tin terminal finish provides good solderability and conductivity for stable connections.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection process.

Technical Specifications

Power Bipolar Junction Transistors (BJT) SGSD100 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Minimum DC Current Gain (hFE):

300

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

130 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

3.5 V

Trade Compliance

SGSD100 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 12