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SGSD93E

STMicroelectronics

SGSD93E by STMicroelectronics

SGSD93E by STMicroelectronics is a NPN Power BJT with Darlington configuration, ideal for switching applications. It features a max VCEsat of 2V, min hFE of 750, and can handle up to 12A of collector current. With a max power dissipation of 80W and operating temperature of 150 °C, it is suitable for high-power electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,829 parts In-Stock

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4,829

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Anansix

USA . 2,114 parts In-Stock

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2,114

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Vyrian

USA . 598 parts In-Stock

1+ parts

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598

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 175 parts In-Stock

1+ parts

$0.886

100+ parts

-

1k+ parts

$0.797

10k+ parts

-

175

$0.886

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$0.797

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MKK Technologies

India . 692 parts In-Stock

1+ parts

$1.666

100+ parts

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692

$1.666

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DigiPath Technology Company

USA . 692 parts In-Stock

1+ parts

$1.666

100+ parts

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692

$1.666

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Corphita

USA . 1,309 parts In-Stock

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1,309

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Parana Technologies

USA . 596 parts In-Stock

1+ parts

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$1.059

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596

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$1.059

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Overview

Unleash the power of innovation with the SGSD93E by STMicroelectronics. Crafted with precision and expertise, this Power Bipolar Junction Transistor is a game-changer in the world of switching applications. With a maximum VCEsat of 2V and a DC current gain of 750, this NPN transistor offers unrivaled performance and efficiency. Whether you're looking to enhance your electronic projects or optimize your industrial systems, the SGSD93E delivers unmatched reliability and durability. Trust STMicroelectronics to revolutionize your experience with cutting-edge technology and unparalleled quality. Elevate your creations with the SGSD93E today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

The NPN polarity or channel type allows for easy integration into existing NPN transistor circuits, making it versatile and widely compatible.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration with built-in diode and resistor simplifies circuit design and saves space, making it convenient for designers.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can handle rapid switching operations effectively and efficiently.

Maximum VCEsat: 2 V

With a low maximum VCEsat of 2 V, this transistor has reduced power loss and improved efficiency in operation.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and placement on PCBs, optimizing space utilization.

Terminal Form: THROUGH-HOLE

The through-hole terminal form makes it easy to solder and install the transistor securely on a PCB.

Maximum Power Dissipation (Abs): 80 W

With a high maximum power dissipation of 80 W, this transistor can handle high-power applications reliably.

Package Style (Meter): FLANGE MOUNT

The flange mount package style provides stability and secure mounting in various industrial environments.

Maximum Power Dissipation Ambient: 80 W

The high maximum power dissipation in ambient conditions ensures the transistor can operate effectively in varying temperature environments.

Minimum DC Current Gain (hFE): 750

The high minimum DC current gain of 750 ensures consistent and reliable transistor performance in amplification applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high temperatures without compromising performance.

Maximum Collector-Emitter Voltage: 140 V

The high maximum collector-emitter voltage rating of 140 V ensures the transistor can handle high voltage applications safely.

Transistor Element Material: SILICON

The silicon transistor element material provides high performance and reliability in various operating conditions.

Maximum Turn On Time (ton): 1100 ns

The maximum turn on time of 1100 ns ensures fast and efficient switching operations in time-sensitive applications.

Maximum Collector Current (IC): 12 A

With a high maximum collector current of 12 A, this transistor can handle high current loads reliably.

Maximum Turn Off Time (toff): 9500 ns

The maximum turn off time of 9500 ns ensures efficient switching transitions and minimizes switching losses.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides corrosion resistance and solderability, ensuring long-term reliability in various environments.

Terminal Position: SINGLE

The single terminal position simplifies installation and connection, making it user-friendly for various applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) SGSD93E attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

140 V

Minimum DC Current Gain (hFE):

750

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

80 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

9500 ns

Maximum Turn On Time (ton):

1100 ns

Maximum VCEsat:

2 V

Trade Compliance

SGSD93E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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