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SGSD00030

STMicroelectronics

SGSD00030 by STMicroelectronics

STMicroelectronics SGSD00030 is a NPN BJT with Darlington configuration, ideal for switching applications. It offers 3.5V VCEsat, 28A IC, and 150W power dissipation. Suitable for high-power flange mount designs requiring fast turn-on/off times and high collector-emitter voltage of 400V.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 2,890 parts In-Stock

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2,890

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Vyrian

USA . 2,787 parts In-Stock

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2,787

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Digiode

USA . 2,362 parts In-Stock

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2,362

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 534 parts In-Stock

1+ parts

$1.332

100+ parts

-

1k+ parts

$1.199

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534

$1.332

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$1.199

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MKK Technologies

India . 335 parts In-Stock

1+ parts

$2.505

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335

$2.505

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DigiPath Technology Company

USA . 335 parts In-Stock

1+ parts

$2.505

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335

$2.505

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Perfect Parts

USA . 32,256 parts In-Stock

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32,256

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Cyclops Electronics Ltd (Excess)

UK . 14,400 parts In-Stock

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14,400

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Corphita

USA . 4,325 parts In-Stock

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4,325

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Parana Technologies

USA . 2,247 parts In-Stock

1+ parts

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100+ parts

$1.593

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2,247

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$1.593

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Overview

Experience the unmatched quality and reliability of STMicroelectronics with the SGSD00030 Power Bipolar Junction Transistor. Perfect for switching applications, this NPN transistor features a Darlington configuration with built-in diode and resistor, ensuring optimal performance. With a maximum VCEsat of 3.5V and a maximum current of 28A, this transistor offers unparalleled efficiency and power dissipation up to 150W. Trust in STMicroelectronics for superior technology that delivers exceptional value and benefits to your projects.

Feature Benefit Bullets

Package Body Material: METAL

Metal package body provides good thermal conductivity, allowing for efficient heat dissipation, which is important for high power applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications and are easier to configure in circuits compared to PNP transistors.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration provides high current gain and is suitable for applications where high current amplification is required. The built-in diode and resistor simplify circuit design and protect the transistor from voltage spikes.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can quickly transition between on and off states, making it ideal for controlling power flow in electronic circuits.

Maximum VCEsat: 3.5 V

Low saturation voltage (VCEsat) leads to minimal power loss and high efficiency in switching applications.

Package Shape: ROUND

The round package shape allows for easy mounting and connection in various electronic systems.

Terminal Form: PIN/PEG

Pin or peg terminals provide a secure and reliable electrical connection, ensuring proper functioning of the transistor in the circuit.

No. of Terminals: 2

Having a limited number of terminals simplifies the connection process and reduces the chances of wiring errors.

Package Style (Meter): FLANGE MOUNT

Flange mounting offers secure attachment and enhances the stability of the transistor in high power applications.

Maximum Power Dissipation Ambient: 150 W

With a high power dissipation rating, this transistor can handle large amounts of power without overheating, making it reliable for demanding applications.

Minimum DC Current Gain (hFE): 20

A minimum DC current gain of 20 ensures sufficient current amplification in the circuit, providing reliable performance.

Maximum Operating Temperature: 175 °C

The high operating temperature rating allows the transistor to withstand elevated temperatures, making it suitable for industrial and automotive applications.

Maximum Collector-Emitter Voltage: 400 V

The high collector-emitter voltage rating gives the transistor the capability to handle high voltages, making it versatile for a wide range of applications.

Transistor Element Material: SILICON

Silicon transistors offer high performance, reliability, and durability, making them a popular choice in electronic circuits.

Maximum Turn On Time (ton): 600 ns

Fast turn-on time ensures quick switching operation, reducing power loss and improving efficiency in the circuit.

Maximum Collector Current (IC): 28 A

The high collector current rating allows the transistor to handle large currents, making it suitable for high-power applications where high current flow is required.

Maximum Turn Off Time (toff): 2100 ns

A fast turn-off time ensures rapid switching between on and off states, contributing to efficient operation in switching circuits.

Terminal Position: BOTTOM

Bottom terminal position simplifies mounting and connection of the transistor in the circuit, enhancing ease of use.

Case Connection: COLLECTOR

Collector case connection facilitates easy integration of the transistor in the circuit and provides a secure grounding point for efficient operation.

Technical Specifications

Power Bipolar Junction Transistors (BJT) SGSD00030 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-3

JESD-30 Code:

O-MBFM-P2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

150 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

2100 ns

Maximum Turn On Time (ton):

600 ns

Maximum VCEsat:

3.5 V

Trade Compliance

SGSD00030 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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