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SGSD00031

STMicroelectronics

SGSD00031 by STMicroelectronics

STMicroelectronics SGSD00031 is a NPN BJT transistor with Darlington configuration, ideal for switching applications. It offers a max VCEsat of 3.5V and can handle up to 28A of collector current. With a package style of flange mount, it has a max power dissipation of 125W and operates at temperatures up to 150 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,769 parts In-Stock

1+ parts

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3,769

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Anansix

USA . 1,043 parts In-Stock

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1,043

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Digiode

USA . 774 parts In-Stock

1+ parts

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774

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 84 parts In-Stock

1+ parts

$1.036

100+ parts

-

1k+ parts

$0.932

10k+ parts

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84

$1.036

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$0.932

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MKK Technologies

India . 1,264 parts In-Stock

1+ parts

$1.948

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1,264

$1.948

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DigiPath Technology Company

USA . 1,264 parts In-Stock

1+ parts

$1.948

100+ parts

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1,264

$1.948

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Corphita

USA . 3,886 parts In-Stock

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3,886

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Parana Technologies

USA . 860 parts In-Stock

1+ parts

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100+ parts

$1.239

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860

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$1.239

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Overview

Enhance your power management solutions with the SGSD00031 by STMicroelectronics. Crafted with precision and expertise, this Power Bipolar Junction Transistor offers unparalleled performance in switching applications. With a maximum collector-emitter voltage of 400V and a maximum collector current of 28A, this NPN Darlington transistor provides reliable and efficient operation. Its built-in diode and resistor configuration simplifies circuit design, while its high DC current gain ensures optimal functionality. Trust STMicroelectronics for quality components that deliver exceptional value and performance. Elevate your projects with the SGSD00031 and experience the difference.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring reliable performance in various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this transistor versatile for different electronic projects.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration offers high current gain, while the built-in diode and resistor add convenience and efficiency to circuit designs.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing fast response times and reliable performance in on/off control circuits.

Maximum VCEsat: 3.5 V

Low VCEsat minimizes power loss in the transistor, enhancing overall efficiency of the circuit.

Terminal Form: THROUGH-HOLE

Through-hole terminals make it easy to solder the transistor onto a circuit board, ensuring secure connections for stable operation.

Maximum Power Dissipation Ambient: 125 W

High power dissipation capability allows the transistor to handle large loads without overheating, ensuring long-term reliability.

Minimum DC Current Gain (hFE): 20

A minimum hFE of 20 ensures sufficient current gain for proper amplification and switching functions in various electronic circuits.

Maximum Operating Temperature: 150 °C

Can operate effectively in a wide range of temperature conditions, making it suitable for applications where temperature fluctuations are common.

Maximum Collector-Emitter Voltage: 400 V

With a high breakdown voltage rating, this transistor can handle high voltages safely in different circuit configurations.

Transistor Element Material: SILICON

Silicon-based transistors offer high reliability and performance, making them a popular choice for a wide range of electronic applications.

Maximum Turn On Time (ton): 600 ns

Fast turn-on time ensures quick response in switching applications, improving the overall efficiency and performance of the circuit.

Maximum Collector Current (IC): 28 A

High collector current rating allows the transistor to handle large current loads, making it suitable for power electronic circuits.

Maximum Turn Off Time (toff): 2100 ns

The maximum turn-off time ensures smooth switching operations and prevents power loss during the switching transition.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/lead terminal finish provides excellent solderability for easy integration into circuit designs, ensuring secure electrical connections.

Terminal Position: SINGLE

Single terminal position simplifies the installation and connection process, making it easy to incorporate the transistor into various electronic devices.

Technical Specifications

Power Bipolar Junction Transistors (BJT) SGSD00031 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-218

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

125 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

2100 ns

Maximum Turn On Time (ton):

600 ns

Maximum VCEsat:

3.5 V

Trade Compliance

SGSD00031 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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