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SGSD93G

STMicroelectronics

SGSD93G by STMicroelectronics

SGSD93G by STMicroelectronics is a NPN BJT transistor with Darlington configuration, ideal for switching applications. It offers a max VCEsat of 2V, hFE of 750, and IC of 12A. With a power dissipation of 80W and operating temperature up to 150 °C, it is suitable for high-power electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,191 parts In-Stock

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4,191

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Anansix

USA . 1,687 parts In-Stock

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1,687

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Vyrian

USA . 1,142 parts In-Stock

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1,142

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,735 parts In-Stock

1+ parts

$1.722

100+ parts

-

1k+ parts

$1.550

10k+ parts

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1,735

$1.722

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$1.550

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MKK Technologies

India . 774 parts In-Stock

1+ parts

$3.239

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774

$3.239

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DigiPath Technology Company

USA . 774 parts In-Stock

1+ parts

$3.239

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774

$3.239

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Corphita

USA . 2,696 parts In-Stock

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2,696

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Parana Technologies

USA . 1,579 parts In-Stock

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$2.059

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1,579

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$2.059

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Overview

Enhance your power management solutions with the SGSD93G by STMicroelectronics. Crafted with precision and reliability, this Power BJT transistor offers a seamless switching experience for various applications. With a built-in diode and resistor, this NPN Darlington transistor ensures efficient performance while handling up to 12A of collector current. Ideal for high-power applications, this device boasts a maximum VCEsat of 2V and a minimum DC current gain of 750, ensuring optimal efficiency. Trust in STMicroelectronics for cutting-edge technology that delivers unparalleled value and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor.

Polarity or Channel Type: NPN

Commonly used in amplification and switching applications due to its current control capabilities.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Simplifies circuit design and saves space by having additional components already integrated.

Transistor Application: SWITCHING

Ideal for applications where fast switching speeds are required, ensuring efficient operation.

Maximum VCEsat: 2 V

Low saturation voltage leads to reduced power loss and improved efficiency.

Package Shape: RECTANGULAR

Facilitates easy mounting and installation in various electronic devices.

Terminal Form: THROUGH-HOLE

Provides a secure connection to the PCB, ensuring reliability in the circuit.

No. of Terminals: 3

Simplified connection with fewer terminals, making it user-friendly.

Maximum Power Dissipation (Abs): 80 W

Capable of handling high power applications without overheating or damage.

Package Style (Meter): FLANGE MOUNT

Allows for easy and secure mounting onto a heat sink for improved heat dissipation.

Maximum Power Dissipation Ambient: 80 W

Maintains high power dissipation capability even in ambient conditions, ensuring reliable performance.

Minimum DC Current Gain (hFE): 750

High current gain provides amplification of input signals for various applications.

Maximum Operating Temperature: 150 °C

Can operate effectively in high-temperature environments without performance degradation.

Maximum Collector-Emitter Voltage: 180 V

Can handle high voltage applications without breakdown or damage to the transistor.

Transistor Element Material: SILICON

Provides reliable and stable performance over a wide range of temperatures and operating conditions.

Maximum Turn On Time (ton): 1100 ns

Fast turn-on time ensures quick response in switching applications.

Maximum Collector Current (IC): 12 A

Capable of handling high current loads, making it suitable for power applications.

Maximum Turn Off Time (toff): 9500 ns

Fast turn-off time reduces switching losses and improves efficiency in the circuit.

Terminal Finish: MATTE TIN

Provides a reliable and corrosion-resistant terminal finish for long-term performance.

Terminal Position: SINGLE

Simplified connection with a single terminal position, reducing complexity in circuit design.

Technical Specifications

Power Bipolar Junction Transistors (BJT) SGSD93G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

180 V

Minimum DC Current Gain (hFE):

750

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

80 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

9500 ns

Maximum Turn On Time (ton):

1100 ns

Maximum VCEsat:

2 V

Trade Compliance

SGSD93G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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