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SGSD311

STMicroelectronics

SGSD311 by STMicroelectronics

SGSD311 by STMicroelectronics is a NPN Power BJT with Darlington configuration, ideal for switching applications. It features a max VCEsat of 5V, 28A IC, and 125W power dissipation. With a built-in diode and resistor, it operates at up to 150 °C temperature range in a rectangular package suitable for flange mount installations.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,142 parts In-Stock

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4,142

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Anansix

USA . 1,738 parts In-Stock

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1,738

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Digiode

USA . 1,707 parts In-Stock

1+ parts

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1,707

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Huijzer Components

Netherlands . 3 parts In-Stock

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3

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 619 parts In-Stock

1+ parts

$1.075

100+ parts

-

1k+ parts

$0.967

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619

$1.075

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$0.967

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MKK Technologies

India . 415 parts In-Stock

1+ parts

$2.021

100+ parts

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415

$2.021

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DigiPath Technology Company

USA . 415 parts In-Stock

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$2.021

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415

$2.021

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Corphita

USA . 4,683 parts In-Stock

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4,683

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Parana Technologies

USA . 1,722 parts In-Stock

1+ parts

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$1.285

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1,722

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$1.285

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Assy Fe

Spain . 1 parts In-Stock

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1

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Overview

Discover the power of the SGSD311 by STMicroelectronics, a high-quality Power Bipolar Junction Transistor designed for switching applications. With its NPN polarity and Darlington configuration, this transistor offers efficient performance and reliability. Manufactured by STMicroelectronics, a trusted industry leader, the SGSD311 provides customers with a durable plastic package and built-in diode and resistor for added convenience. Experience the benefits of this transistor's 28A maximum collector current, 125W maximum power dissipation, and 400V maximum collector-emitter voltage. Upgrade your electronics with the SGSD311 today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, making this transistor versatile.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The built-in diode and resistor allow for easier and more efficient circuit design, saving time and resources.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring reliable performance in these types of circuits.

Maximum VCEsat: 5 V

Low saturation voltage helps minimize power loss and increases efficiency in switching operations.

Package Shape: RECTANGULAR

Provides a standardized form factor for easy integration into circuits and systems.

Terminal Form: THROUGH-HOLE

Through-hole terminals make it easy to solder and secure the transistor onto a PCB or breadboard.

No. of Terminals: 3

Simplifies connection and integration into circuits with a minimal number of terminals.

Package Style (Meter): FLANGE MOUNT

Allows for easy mounting and secure attachment to surfaces or heat sinks.

Maximum Power Dissipation Ambient: 125 W

High power dissipation capability makes it suitable for demanding applications that require power switching.

Minimum DC Current Gain (hFE): 20

A higher DC current gain ensures reliable amplification and switching performance in various applications.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for operation in harsh environments or industrial applications.

Maximum Collector-Emitter Voltage: 400 V

With a high breakdown voltage, this transistor can handle high voltage applications without breakdown.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, making them a popular choice in electronic circuits.

Maximum Turn On Time (ton): 600 ns

Fast turn-on time ensures quick response in switching operations, improving efficiency and performance.

Maximum Collector Current (IC): 28 A

High collector current rating allows for handling high current loads in demanding applications.

Maximum Turn Off Time (toff): 2100 ns

Sufficient turn-off time ensures minimal switching losses and stable operation in switching circuits.

Terminal Position: SINGLE

Single terminal position simplifies connection and installation in circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) SGSD311 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-218

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

125 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

2100 ns

Maximum Turn On Time (ton):

600 ns

Maximum VCEsat:

5 V

Trade Compliance

SGSD311 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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