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SGSD200

STMicroelectronics

SGSD200 by STMicroelectronics

SGSD200 by STMicroelectronics is a PNP BJT transistor with Darlington configuration, ideal for switching applications. It features a max VCEsat of 3.5V, hFE of 300, and can handle up to 25A collector current. With a max power dissipation of 130W and operating temperature of 150 °C, it is suitable for high-power electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,603 parts In-Stock

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8,603

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Anansix

USA . 2,601 parts In-Stock

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2,601

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Digiode

USA . 2,580 parts In-Stock

1+ parts

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2,580

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LIBRA Elektronik GmbH

Germany . 1,700 parts In-Stock

1+ parts

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1,700

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Bristol Electronics

USA . 400 parts In-Stock

1+ parts

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400

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Atlantic Semiconductor

USA . 400 parts In-Stock

1+ parts

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400

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ACDS - Activité Composants Distribution Service

France . 50 parts In-Stock

1+ parts

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50

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ECAB

Sweden . 40 parts In-Stock

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40

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Microfarads

USA . 2 parts In-Stock

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2

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GES GmbH

Germany . 1 parts In-Stock

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1

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 335 parts In-Stock

1+ parts

$0.302

100+ parts

-

1k+ parts

$0.272

10k+ parts

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335

$0.302

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$0.272

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MKK Technologies

India . 2,344 parts In-Stock

1+ parts

$0.567

100+ parts

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2,344

$0.567

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DigiPath Technology Company

USA . 2,344 parts In-Stock

1+ parts

$0.567

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2,344

$0.567

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Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$1.674

100+ parts

$1.523

1k+ parts

$1.373

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500

$1.674

$1.523

$1.373

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AZTECH Wire

Italy . 547 parts In-Stock

1+ parts

$18.560

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547

$18.560

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Kepictronics

USA . 13,000 parts In-Stock

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13,000

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Alle Elektronik GmbH

Germany . 3,713 parts In-Stock

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3,713

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Corphita

USA . 1,905 parts In-Stock

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1,905

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Parana Technologies

USA . 1,554 parts In-Stock

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$0.361

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1,554

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$0.361

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A-Z Elektronik GmbH

Germany . 1,340 parts In-Stock

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1,340

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Assy Fe

Spain . 204 parts In-Stock

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204

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GreenTree Electronics

Israel . 50 parts In-Stock

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50

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Perfect Parts

USA . 32 parts In-Stock

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32

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Overview

Elevate your power switching capabilities with the SGSD200 by STMicroelectronics. Crafted with precision and expertise, this Power Bipolar Junction Transistor offers superior performance and reliability. Ideal for a wide range of applications, from industrial machinery to automotive systems, this PNP transistor boasts a Darlington configuration with a built-in diode and resistor, ensuring seamless operation. Experience the value of efficiency and durability with the SGSD200, where quality meets innovation to empower your projects like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring reliability in various operating conditions.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required, offering versatility and compatibility in circuit design.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Convenient integrated design saves space on the PCB and simplifies circuitry, reducing overall component count and complexity.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance and fast response times.

Maximum VCEsat: 3.5 V

Low saturation voltage minimizes power loss and improves energy efficiency in the circuit.

Terminal Form: THROUGH-HOLE

Easy to solder onto a PCB, providing a secure and robust connection for stable operation.

Maximum Power Dissipation Ambient: 130 W

High power dissipation capability allows for handling of large currents and voltages without overheating.

Minimum DC Current Gain (hFE): 300

High current gain ensures amplification of input signals with accuracy and precision, enhancing overall circuit performance.

Maximum Operating Temperature: 150 °C

Can operate at elevated temperatures without performance degradation, suitable for demanding industrial applications.

Maximum Collector-Emitter Voltage: 80 V

Can withstand high voltages, making it suitable for applications requiring voltage switching or regulation.

Transistor Element Material: SILICON

Silicon material offers excellent thermal stability and electrical performance, ensuring long-term reliability.

Maximum Collector Current (IC): 25 A

High collector current rating allows for handling of large currents, making it suitable for high-power applications.

Terminal Finish: TIN

Tin finish enhances solderability and provides good conductivity for reliable electrical connections.

Terminal Position: SINGLE

Simplified terminal layout for easy installation and connection in the circuit, improving overall user experience.

Technical Specifications

Power Bipolar Junction Transistors (BJT) SGSD200 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Minimum DC Current Gain (hFE):

300

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

130 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

3.5 V

Trade Compliance

SGSD200 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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