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SGSD93F

STMicroelectronics

SGSD93F by STMicroelectronics

SGSD93F by STMicroelectronics is a NPN power BJT with Darlington configuration, ideal for switching applications. It features a max VCEsat of 2V, hFE of 750, and can handle up to 12A collector current. With a max power dissipation of 80W and operating temperature of 150 °C, it is suitable for high-power electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,210 parts In-Stock

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2,210

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Vyrian

USA . 1,760 parts In-Stock

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1,760

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Anansix

USA . 1,169 parts In-Stock

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1,169

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 792 parts In-Stock

1+ parts

$1.717

100+ parts

-

1k+ parts

$1.545

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792

$1.717

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$1.545

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MKK Technologies

India . 50 parts In-Stock

1+ parts

$3.228

100+ parts

-

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50

$3.228

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DigiPath Technology Company

USA . 50 parts In-Stock

1+ parts

$3.228

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50

$3.228

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Parana Technologies

USA . 1,405 parts In-Stock

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$2.053

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1,405

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$2.053

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Corphita

USA . 566 parts In-Stock

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566

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Overview

Discover the SGSD93F by STMicroelectronics, a high-quality Power Bipolar Junction Transistor designed for switching applications. With a Darlington configuration and built-in diode and resistor, this NPN transistor offers exceptional performance and reliability. Whether you're looking to optimize power dissipation or improve efficiency, this transistor is the perfect solution. Trust in STMicroelectronics' reputation for excellence and unlock the full potential of your electronic projects with the SGSD93F.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, offering versatility in circuit design.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration provides high current gain and the built-in diode and resistor simplify circuit design and save space.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable operation in such scenarios.

Maximum VCEsat: 2 V

Low VCEsat value indicates minimal voltage drop when the transistor is on, leading to efficient switching performance.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and integration into circuit boards.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and ease of soldering during assembly.

No. of Terminals: 3

Simple 3-terminal design for straightforward circuit connections.

Maximum Power Dissipation (Abs): 80 W

High power dissipation capability allows for handling large loads without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount design for secure and stable mounting in applications.

Maximum Power Dissipation Ambient: 80 W

Maintaining 80W power dissipation even in varying ambient temperatures, ensuring stable operation.

Minimum DC Current Gain (hFE): 750

High DC current gain ensures accurate and reliable amplification in the circuit.

Maximum Operating Temperature: 150 °C

Operates reliably at high temperatures, making it suitable for industrial and automotive applications.

Maximum Collector-Emitter Voltage: 160 V

High collector-emitter voltage rating allows for handling higher voltages in the circuit.

Transistor Element Material: SILICON

Silicon material provides good performance and reliability in various operating conditions.

Maximum Turn On Time (ton): 1100 ns

Fast turn-on time ensures quick response in switching applications.

Maximum Collector Current (IC): 12 A

High collector current rating allows for handling large currents in the circuit.

Maximum Turn Off Time (toff): 9500 ns

Sufficient turn-off time ensures proper switching off, preventing any current leakage or damage.

Terminal Finish: MATTE TIN

Matte tin finish offers good conductivity and solderability for reliable connections.

Terminal Position: SINGLE

Single terminal position simplifies circuit design and connections.

Technical Specifications

Power Bipolar Junction Transistors (BJT) SGSD93F attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

160 V

Minimum DC Current Gain (hFE):

750

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

80 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

9500 ns

Maximum Turn On Time (ton):

1100 ns

Maximum VCEsat:

2 V

Trade Compliance

SGSD93F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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