Loading...

BU941ZT

STMicroelectronics

BU941ZT by STMicroelectronics

STMicroelectronics' BU941ZT is a NPN BJT with Darlington configuration, ideal for switching applications. It features 2V VCEsat, 150W power dissipation, and 15A collector current. With a max voltage of 350V and operating temperature of 175°C, it's suitable for high-power tasks in various industries.

Median Price

$2.132

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

RS (Exports)

UK . 18 parts In-Stock

1+ parts

$2.688

100+ parts

$1.672

1k+ parts

-

10k+ parts

-

18

$2.688

$1.672

-

-

Chip1Stop

Japan . 1,016 parts In-Stock

1+ parts

$4.080

100+ parts

$1.900

1k+ parts

$1.330

10k+ parts

-

1,016

$4.080

$1.900

$1.330

-

DigiKey

USA . 496 parts In-Stock

1+ parts

$4.130

100+ parts

$3.036

1k+ parts

$2.180

10k+ parts

-

496

$4.130

$3.036

$2.180

-

Arrow

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.576

10k+ parts

$1.547

2,000

-

-

$1.576

$1.547

Verical

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.576

10k+ parts

$1.547

2,000

-

-

$1.576

$1.547

Future Electronics

Canada . 750 parts In-Stock

1+ parts

-

100+ parts

$1.570

1k+ parts

$1.500

10k+ parts

-

750

-

$1.570

$1.500

-

EBV Elektronik

Germany . 600 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

600

-

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 62 parts In-Stock

1+ parts

$2.040

100+ parts

-

1k+ parts

-

10k+ parts

-

62

$2.040

-

-

-

Digiode

USA . 3,911 parts In-Stock

1+ parts

$2.831

100+ parts

-

1k+ parts

-

10k+ parts

-

3,911

$2.831

-

-

-

TME

Poland . 5 parts In-Stock

1+ parts

$3.690

100+ parts

$2.430

1k+ parts

$2.300

10k+ parts

-

5

$3.690

$2.430

$2.300

-

Vyrian

USA . 7,491 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,491

-

-

-

-

Anansix

USA . 1,492 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,492

-

-

-

-

IBS Electronics

USA . 800 parts In-Stock

1+ parts

-

100+ parts

$2.041

1k+ parts

$1.950

10k+ parts

-

800

-

$2.041

$1.950

-

VNN

France . 750 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

750

-

-

-

-

Bristol Electronics

USA . 150 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

150

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 828 parts In-Stock

1+ parts

$1.340

100+ parts

-

1k+ parts

-

10k+ parts

-

828

$1.340

-

-

-

Semicontronic

India . 812 parts In-Stock

1+ parts

$1.340

100+ parts

$1.306

1k+ parts

$1.300

10k+ parts

-

812

$1.340

$1.306

$1.300

-

IDEA Electronic Components Group

UK . 1,348 parts In-Stock

1+ parts

$1.360

100+ parts

-

1k+ parts

$1.224

10k+ parts

-

1,348

$1.360

-

$1.224

-

Aztec Data Supply Inc.

USA . 1,897 parts In-Stock

1+ parts

$1.862

100+ parts

-

1k+ parts

-

10k+ parts

-

1,897

$1.862

-

-

-

Continental Prestige Electronics

USA . 5,284 parts In-Stock

1+ parts

$2.040

100+ parts

-

1k+ parts

-

10k+ parts

$1.999

5,284

$2.040

-

-

$1.999

Argo Parts USA

USA . 5,132 parts In-Stock

1+ parts

$2.040

100+ parts

-

1k+ parts

-

10k+ parts

-

5,132

$2.040

-

-

-

Corohmni

South Africa . 97 parts In-Stock

1+ parts

$2.190

100+ parts

-

1k+ parts

-

10k+ parts

-

97

$2.190

-

-

-

MKK Technologies

India . 1,368 parts In-Stock

1+ parts

$2.557

100+ parts

-

1k+ parts

-

10k+ parts

-

1,368

$2.557

-

-

-

DigiPath Technology Company

USA . 1,368 parts In-Stock

1+ parts

$2.557

100+ parts

-

1k+ parts

-

10k+ parts

-

1,368

$2.557

-

-

-

Corphita

USA . 306 parts In-Stock

1+ parts

$2.682

100+ parts

-

1k+ parts

-

10k+ parts

-

306

$2.682

-

-

-

iodParts Technologies Inc.

India . 50,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

50,000

-

-

-

-

Infinite Electronics LLP (Excess)

. 6,007 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,007

-

-

-

-

Microchip USA

USA . 5,429 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,429

-

-

-

-

Perfect Parts

USA . 2,073 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,073

-

-

-

-

Alle Elektronik GmbH

Germany . 1,669 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,669

-

-

-

-

Assy Fe

Spain . 66 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

66

-

-

-

-

Parana Technologies

USA . 50 parts In-Stock

1+ parts

-

100+ parts

$1.626

1k+ parts

-

10k+ parts

-

50

-

$1.626

-

-

Overview

Unlock the power of innovation with the BU941ZT from STMicroelectronics, a leading manufacturer of high-quality Power Bipolar Junction Transistors (BJTs). This NPN transistor boasts a Darlington configuration with built-in diode and resistor, making it ideal for switching applications. With a maximum collector-emitter voltage of 350V and a maximum power dissipation of 180W, this transistor offers unparalleled performance and reliability. Trust STMicroelectronics to deliver cutting-edge technology that meets your needs. Elevate your projects with the BU941ZT today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and helps in reducing the overall weight of the transistor, making it easier to handle and install.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile for different applications.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration offers high current gain, while the built-in diode and resistor simplify circuit design and save space on the PCB.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor ensures fast and efficient switching characteristics.

Maximum VCEsat: 2 V

Low VCEsat voltage minimizes power losses and improves efficiency in switching operations.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy mounting and integration into electronic devices.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and ease of soldering during assembly.

Maximum Power Dissipation (Abs): 150 W

High power dissipation capability ensures the transistor can handle heavy loads without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount package style enables secure mounting on heatsinks for effective heat dissipation.

Maximum Power Dissipation Ambient: 180 W

Good ambient power dissipation rating indicates the transistor can operate efficiently in various environmental conditions.

Minimum DC Current Gain (hFE): 300

High DC current gain ensures accurate and stable amplification of the input signal in the circuit.

Maximum Operating Temperature: 175 °C

High operating temperature rating allows the transistor to function reliably in elevated temperature environments.

Maximum Collector-Emitter Voltage: 350 V

High collector-emitter voltage rating provides sufficient margin for voltage spikes and ensures the transistor's reliability in demanding applications.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability compared to other semiconductor materials, making this transistor a durable choice.

Maximum Collector Current (IC): 15 A

High collector current rating allows the transistor to handle substantial current flows without getting damaged.

Terminal Finish: MATTE TIN

Matte tin finish on terminals provides good solderability and corrosion resistance, ensuring reliable connections in the circuit.

Terminal Position: SINGLE

Single terminal position simplifies the installation process and makes it easier to integrate the transistor into the circuit.

Case Connection: COLLECTOR

Having the case connected to the collector terminal helps in improving thermal management and enhances the overall performance of the transistor.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BU941ZT attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

350 V

Minimum DC Current Gain (hFE):

300

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

180 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

2 V

Trade Compliance

BU941ZT Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 13