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BU941PFI

STMicroelectronics

BU941PFI by STMicroelectronics

STMicroelectronics' BU941PFI is a NPN BJT with Darlington configuration, ideal for switching applications. It offers VCEsat of 2V, hFE of 300, and IC of 15A. With a max power dissipation of 65W and operating temperature up to 175 °C, it suits various power control needs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,980 parts In-Stock

1+ parts

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4,980

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Digiode

USA . 2,260 parts In-Stock

1+ parts

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2,260

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Anansix

USA . 647 parts In-Stock

1+ parts

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647

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ECAB

Sweden . 5 parts In-Stock

1+ parts

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5

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 378 parts In-Stock

1+ parts

$0.043

100+ parts

-

1k+ parts

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10k+ parts

$0.041

378

$0.043

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-

$0.041

IDEA Electronic Components Group

UK . 1,285 parts In-Stock

1+ parts

$1.033

100+ parts

-

1k+ parts

$0.930

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1,285

$1.033

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$0.930

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MKK Technologies

India . 1,022 parts In-Stock

1+ parts

$1.943

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1,022

$1.943

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DigiPath Technology Company

USA . 1,022 parts In-Stock

1+ parts

$1.943

100+ parts

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1,022

$1.943

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Parana Technologies

USA . 1,954 parts In-Stock

1+ parts

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100+ parts

$1.235

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1,954

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$1.235

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Northwest PG Solutions

USA . 1,846 parts In-Stock

1+ parts

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1,846

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Corphita

USA . 781 parts In-Stock

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781

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Overview

Enhance your power management solutions with the STMicroelectronics BU941PFI, a high-quality Power Bipolar Junction Transistor. Manufactured by industry leader STMicroelectronics, this NPN transistor offers a unique configuration with a built-in diode and resistor, making it perfect for switching applications. With a maximum collector-emitter voltage of 400V and a maximum power dissipation of 65W, this transistor provides reliable performance in a variety of scenarios. Trust STMicroelectronics to deliver cutting-edge technology that meets your power needs efficiently and effectively.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the transistor, making it ideal for various electronic applications.

Polarity or Channel Type: NPN

NPN configuration allows for high efficiency and low noise operation, making it suitable for switching applications.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Darlington configuration with built-in diode and resistor simplifies circuit design and enhances overall performance.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring fast and reliable performance.

Maximum VCEsat: 2 V

Low VCEsat value indicates minimal voltage drop and efficient operation.

Package Shape: RECTANGULAR

Rectangular package shape allows for compact and efficient PCB layout.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and ease of soldering.

Maximum Power Dissipation (Abs): 65 W

High power dissipation capability allows for reliable operation under heavy load conditions.

Package Style (Meter): FLANGE MOUNT

Flange mount package style enables easy mounting and heat dissipation, enhancing overall performance.

Maximum Power Dissipation Ambient: 65 W

The transistor can handle high power dissipation in various ambient conditions, ensuring reliability.

Minimum DC Current Gain (hFE): 300

High DC current gain ensures strong amplification capability for improved signal processing.

Maximum Operating Temperature: 175 °C

High maximum operating temperature allows for reliable operation in demanding environments.

Maximum Collector-Emitter Voltage: 400 V

High collector-emitter voltage rating provides flexibility for different types of circuits and applications.

Transistor Element Material: SILICON

Silicon material offers high thermal conductivity and reliability for long-term performance.

Maximum Collector Current (IC): 15 A

High collector current rating allows for handling of large currents, suitable for power switching applications.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/lead terminal finish ensures good solderability and long-term stability.

Terminal Position: SINGLE

Single terminal position simplifies installation and circuit connection.

Case Connection: ISOLATED

Isolated case connection provides enhanced safety and reliability in circuit design.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BU941PFI attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Minimum DC Current Gain (hFE):

300

JEDEC-95 Code:

TO-218

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

65 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

2 V

Trade Compliance

BU941PFI Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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