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BU941Z

STMicroelectronics

BU941Z by STMicroelectronics

STMicroelectronics' BU941Z is a NPN BJT with Darlington configuration, ideal for switching applications. With VCEsat of 2V and hFE of 300, it can handle up to 15A IC and 180W power dissipation. The transistor operates at a max temp of 200 °C, making it suitable for high-power tasks in various industries.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,576 parts In-Stock

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2,576

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Anansix

USA . 1,552 parts In-Stock

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1,552

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Vyrian

USA . 835 parts In-Stock

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835

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Electronic Expediters

USA . 52 parts In-Stock

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52

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,176 parts In-Stock

1+ parts

$1.360

100+ parts

-

1k+ parts

$1.224

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1,176

$1.360

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$1.224

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MKK Technologies

India . 520 parts In-Stock

1+ parts

$2.557

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520

$2.557

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DigiPath Technology Company

USA . 520 parts In-Stock

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$2.557

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520

$2.557

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Corphita

USA . 3,101 parts In-Stock

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3,101

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Assy Fe

Spain . 1,000 parts In-Stock

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Native Components

USA . 600 parts In-Stock

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600

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Northwest PG Solutions

USA . 335 parts In-Stock

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335

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Parana Technologies

USA . 222 parts In-Stock

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$1.626

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222

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$1.626

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Overview

Discover the BU941Z by STMicroelectronics, a high-quality Power BJT that offers superior performance in switching applications. With a maximum VCEsat of 2V and a minimum hFE of 300, this NPN Darlington transistor with built-in diode and resistor is designed to exceed expectations. Its 180W power dissipation and 15A collector current make it a reliable choice for demanding tasks. Trust STMicroelectronics' expertise and innovation to deliver cutting-edge technology that meets your needs. Upgrade your projects with the BU941Z and experience the benefits of top-tier components.

Feature Benefit Bullets

Package Body Material: METAL

The metal package body provides durability and efficient heat dissipation, making it suitable for high power applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering versatility in design and compatibility with various components.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration enhances the current gain of the transistor, while the built-in diode and resistor provide protection and improve overall performance.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast response times and efficient operation in on/off states.

Maximum VCEsat: 2 V

Low VCEsat helps minimize power loss and improves efficiency in switching operations.

Package Shape: ROUND

The round package shape allows for easy mounting and handling, making it convenient for assembly and installation.

Terminal Form: PIN/PEG

Pin/peg terminals provide secure connections and easy integration into circuit boards or other electronic devices.

Maximum Power Dissipation (Abs): 180 W

With a high maximum power dissipation, this transistor can handle demanding power requirements and operate reliably under heavy loads.

Package Style (Meter): FLANGE MOUNT

The flange mount package style offers stability and secure attachment, making it suitable for applications where vibration or movement is a concern.

Minimum DC Current Gain (hFE): 300

A high minimum DC current gain ensures consistent and reliable performance in amplification and switching circuits.

Maximum Operating Temperature: 200 °C

The high maximum operating temperature allows for use in a wide range of environments and applications without compromising performance.

Maximum Collector-Emitter Voltage: 350 V

With a high maximum collector-emitter voltage, this transistor can withstand high voltage spikes and fluctuations, ensuring durability and reliability in the circuit.

Transistor Element Material: SILICON

Silicon transistors offer high performance, low noise, and good temperature stability, making them a reliable choice for various electronic applications.

Maximum Collector Current (IC): 15 A

The high maximum collector current allows this transistor to handle large current loads, making it suitable for high-power applications.

Terminal Position: BOTTOM

The bottom terminal position facilitates easy connections and integration into electronic circuits or devices, simplifying the overall design and assembly process.

Case Connection: COLLECTOR

The collector case connection ensures efficient heat dissipation and proper grounding, enhancing the overall performance and longevity of the transistor.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BU941Z attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

350 V

Minimum DC Current Gain (hFE):

300

JEDEC-95 Code:

TO-3

JESD-30 Code:

O-MBFM-P2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

180 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

2 V

Trade Compliance

BU941Z Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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