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BU941ZSM

STMicroelectronics

BU941ZSM by STMicroelectronics

BU941ZSM by STMicroelectronics is a high-performance NPN Darlington transistor designed for efficient switching applications. It features a max power dissipation of 150W, a collector-emitter voltage of 350V, and operates at temperatures up to 175 °C. Its compact surface mount design ensures versatility in various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,432 parts In-Stock

1+ parts

-

100+ parts

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3,432

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Anansix

USA . 2,049 parts In-Stock

1+ parts

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1k+ parts

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2,049

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Digiode

USA . 1,190 parts In-Stock

1+ parts

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1,190

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,851 parts In-Stock

1+ parts

$1.138

100+ parts

-

1k+ parts

$1.024

10k+ parts

-

1,851

$1.138

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$1.024

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Native Components

USA . 771 parts In-Stock

1+ parts

$1.370

100+ parts

-

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771

$1.370

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Northwest PG Solutions

USA . 1,893 parts In-Stock

1+ parts

$1.507

100+ parts

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1,893

$1.507

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MKK Technologies

India . 1,027 parts In-Stock

1+ parts

$2.140

100+ parts

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1,027

$2.140

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DigiPath Technology Company

USA . 1,027 parts In-Stock

1+ parts

$2.140

100+ parts

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1,027

$2.140

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Parana Technologies

USA . 1,884 parts In-Stock

1+ parts

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100+ parts

$1.361

1k+ parts

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1,884

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$1.361

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Corphita

USA . 293 parts In-Stock

1+ parts

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293

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Overview

Unlock the power of innovation with the BU941ZSM from STMicroelectronics! This high-performance NPN Darlington transistor, designed for efficient switching applications, ensures reliability and top-notch quality. With a robust construction that withstands high temperatures and impressive current gains, it's perfect for diverse electronic projects. Experience unparalleled performance and trust in a leading manufacturer dedicated to excellence—choose BU941ZSM for your next design!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy body ensures longevity and resistance to environmental factors, making it ideal for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are widely used for their ability to amplify signals and drive loads, making them versatile components in electronic circuits.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration provides high current gain, making this transistor suitable for applications demanding high efficiency and sensitivity.

Transistor Application: SWITCHING

Designed for switching applications, this transistor allows for fast and reliable operation in digital and analog signal processing.

Surface Mount: YES

Its surface-mount design allows for compact PCB layouts, enhancing the efficiency and miniaturization of electronic devices.

Package Shape: RECTANGULAR

The rectangular shape of the package optimizes space on the PCB and supports scalable manufacturing processes.

Terminal Form: GULL WING

Gull-wing terminals provide strong mechanical support and simplify soldering, ultimately ensuring reliable connections in PCB assemblies.

No. of Terminals: 10

With 10 terminals, this transistor offers multiple connection options, enabling flexible circuit designs and integration capabilities.

Maximum Power Dissipation (Abs): 150 W

The high power dissipation capability allows for efficient thermal management, which is crucial for maintaining performance in high-power applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style minimizes space usage on the PCB, making it a suitable choice for modern compact electronics.

Minimum DC Current Gain (hFE): 300

A minimum DC current gain of 300 ensures strong amplification, making this transistor suitable for low-signal applications.

Maximum Operating Temperature: 175 °C

With a maximum operating temperature of 175 °C, this transistor is suitable for high-temperature environments, enhancing its reliability in challenging conditions.

Maximum Collector-Emitter Voltage: 350 V

The high collector-emitter voltage rating allows this transistor to be used in high-voltage applications, providing a broader range of use cases.

Transistor Element Material: SILICON

Silicon-based transistors are known for their high efficiency and reliability, making them the preferred choice for most electronic applications.

Maximum Collector Current (IC): 15 A

The ability to handle up to 15A of collector current supports heavy-duty applications, ensuring optimal performance in power circuits.

Terminal Finish: Tin/Lead (Sn/Pb)

The tin/lead terminal finish promotes excellent solderability, ensuring strong and durable joint connections in various assembly processes.

Terminal Position: DUAL

Dual terminal position facilitates more versatile mounting options, enhancing flexibility in circuit design and installation.

Case Connection: COLLECTOR

Having the collector case connection improves thermal performance and ensures stable operation in various configurations.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BU941ZSM attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

350 V

Minimum DC Current Gain (hFE):

300

JESD-30 Code:

R-PDSO-G10

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

10

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BU941ZSM Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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