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BU941ZP

STMicroelectronics

BU941ZP by STMicroelectronics

STMicroelectronics' BU941ZP is a NPN BJT with Darlington configuration, built-in diode, and resistor. It has a max VCEsat of 2V, hFE of 300, and can handle up to 15A collector current. Ideal for switching applications with a max power dissipation of 155W in ambient temperatures up to 175 °C.

Median Price

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Lifecycle Status

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7

In-Stock Inventory

1k+

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Digiode

USA . 3,635 parts In-Stock

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Anansix

USA . 2,249 parts In-Stock

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Vyrian

USA . 56 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 36 parts In-Stock

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LittleDiode

UK . 8 parts In-Stock

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ECAB

Sweden . 3 parts In-Stock

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Donberg Electronics Ltd

Ireland . 2 parts In-Stock

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Advanced Electronics

New Zealand . 40 parts In-Stock

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$0.918

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$0.835

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$0.753

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IDEA Electronic Components Group

UK . 1,914 parts In-Stock

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$1.570

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$1.413

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MKK Technologies

India . 127 parts In-Stock

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$2.951

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DigiPath Technology Company

USA . 127 parts In-Stock

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Native Components

USA . 622 parts In-Stock

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Northwest PG Solutions

USA . 699 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 18,332 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,852 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,901 parts In-Stock

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Perfect Parts

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Parana Technologies

USA . 1,391 parts In-Stock

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Corphita

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Overview

Experience the high-quality performance and reliability of the BU941ZP Power Bipolar Junction Transistor by STMicroelectronics. With its NPN Darlington configuration and built-in diode and resistor, this transistor is ideal for switching applications. Offering a maximum VCEsat of 2V and a maximum collector current of 15A, this component ensures efficient power dissipation up to 155W. Trust in STMicroelectronics' reputation for excellence in semiconductor manufacturing and elevate your electronic designs with the BU941ZP. Unlock new possibilities and enhance your projects with the exceptional value and benefits this product brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and insulation for the transistor, making it suitable for various environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Darlington configuration offers high current gain and the built-in diode/resistor adds convenience for circuit design.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing efficient control of power flow.

Maximum VCEsat: 2 V

Low VCEsat ensures minimal voltage drop across the collector-emitter junction, reducing power loss.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and placement in circuit boards.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer secure connections and easy soldering.

Maximum Power Dissipation (Abs): 155 W

High power dissipation capability allows for reliable performance under heavy loads.

Maximum Collector Current (IC): 15 A

High collector current rating enables the transistor to handle large currents.

Minimum DC Current Gain (hFE): 300

High DC current gain ensures efficient amplification and switching in circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BU941ZP attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

350 V

Minimum DC Current Gain (hFE):

300

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

155 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

2 V

Trade Compliance

BU941ZP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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