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BU941P

STMicroelectronics

BU941P by STMicroelectronics

STMicroelectronics' BU941P is a NPN Power BJT with Darlington configuration, ideal for switching applications. With VCEsat of 2V and IC of 15A, it can handle up to 155W power dissipation. The transistor operates at max temp of 175 °C and has a max VCE of 400V, making it suitable for high-power tasks.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 4,448 parts In-Stock

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4,448

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Anansix

USA . 476 parts In-Stock

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476

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Vyrian

USA . 356 parts In-Stock

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356

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ComSIT Distribution GmbH

Germany . 30 parts In-Stock

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30

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Fibra_Brandt Electronic GMBH

Germany . 22 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 11 parts In-Stock

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Electronic Expediters

USA . 7 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,707 parts In-Stock

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$1.305

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$1.174

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$1.305

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$1.174

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MKK Technologies

India . 1,287 parts In-Stock

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$2.453

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$2.453

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DigiPath Technology Company

USA . 1,287 parts In-Stock

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$2.453

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$2.453

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Native Components

USA . 470 parts In-Stock

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$1,799.420

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$1,763.432

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$1,745.437

10k+ parts

$1,727.443

470

$1,799.420

$1,763.432

$1,745.437

$1,727.443

Northwest PG Solutions

USA . 993 parts In-Stock

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$1,979.362

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$1,979.362

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QUARKTWIN TECHNOLOGY LTD

USA . 15,997 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,600 parts In-Stock

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Corphita

USA . 1,749 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,733 parts In-Stock

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Parana Technologies

USA . 1,620 parts In-Stock

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$1.560

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$1.560

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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Perfect Parts

USA . 336 parts In-Stock

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Assy Fe

Spain . 7 parts In-Stock

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Overview

Experience the power of reliability with the BU941P by STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics delivers high-quality Power Bipolar Junction Transistors for various applications such as switching. The BU941P offers customers a durable and efficient solution with its Darlington configuration, built-in diode, and resistor. With a maximum VCEsat of 2V and a maximum power dissipation of 155W, this transistor ensures optimal performance and longevity. Trust STMicroelectronics to provide you with the best in class components for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides high durability and reliability, making it suitable for various applications.

Polarity or Channel Type: NPN

Allows for easy integration into NPN circuit designs.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Offers enhanced performance and convenience by combining multiple functions in a single component.

Transistor Application: SWITCHING

Optimized for switching applications, ensuring efficient performance.

Maximum VCEsat: 2 V

Low saturation voltage helps in minimizing power loss and improving efficiency.

Package Shape: RECTANGULAR

Easily fits into various PCB layouts and assemblies.

Terminal Form: THROUGH-HOLE

Enables easy and secure mounting on PCBs.

No. of Terminals: 3

Simplifies the circuit design and connection process.

Maximum Power Dissipation (Abs): 155 W

Can handle high power levels without overheating, ensuring reliable operation.

Package Style (Meter): FLANGE MOUNT

Allows for easy mounting and mechanical support in various applications.

Maximum Power Dissipation Ambient: 155 W

Maintains stable performance even in high-temperature environments.

Minimum DC Current Gain (hFE): 300

Provides high current gain, allowing for efficient amplification and switching.

Maximum Operating Temperature: 175 °C

Can operate effectively in high-temperature conditions without degrading performance.

Maximum Collector-Emitter Voltage: 400 V

Supports high voltage applications with a wide safety margin.

Transistor Element Material: SILICON

Offers high reliability and performance due to the inherent properties of silicon.

Maximum Collector Current (IC): 15 A

Capable of handling high current levels, making it suitable for power applications.

Terminal Finish: Matte Tin (Sn)

Enhances solderability and ensures a reliable electrical connection.

Terminal Position: SINGLE

Simplifies circuit design and PCB layout by providing a straightforward connection.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BU941P attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Minimum DC Current Gain (hFE):

300

JEDEC-95 Code:

TO-218

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

155 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

2 V

Trade Compliance

BU941P Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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