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BU941

STMicroelectronics

BU941 by STMicroelectronics

STMicroelectronics' BU941 is a NPN BJT with Darlington configuration, ideal for switching applications. It offers a max VCEsat of 2V and can handle up to 15A collector current. With a max power dissipation of 180W, it operates at temperatures up to 200 °C in various electronic systems.

Median Price

$3.250

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,167 parts In-Stock

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$3.250

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Digiode

USA . 1,599 parts In-Stock

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1,599

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Anansix

USA . 419 parts In-Stock

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419

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Q Components

USA . 220 parts In-Stock

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220

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MRC Electronics

USA . 150 parts In-Stock

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150

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LittleDiode

UK . 4 parts In-Stock

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Electronic Expediters

USA . 3 parts In-Stock

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R&J Components

USA . 2 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 901 parts In-Stock

1+ parts

$0.040

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$0.038

901

$0.040

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$0.038

IDEA Electronic Components Group

UK . 59 parts In-Stock

1+ parts

$0.397

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$0.357

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59

$0.397

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$0.357

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MKK Technologies

India . 651 parts In-Stock

1+ parts

$0.746

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651

$0.746

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DigiPath Technology Company

USA . 651 parts In-Stock

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$0.746

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$0.746

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Benley Electronics

USA . 2 parts In-Stock

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$2.000

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QUARKTWIN TECHNOLOGY LTD

USA . 27,603 parts In-Stock

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Metaverse IC Inc.

Canada . 8,000 parts In-Stock

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Corphita

USA . 3,589 parts In-Stock

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Parana Technologies

USA . 897 parts In-Stock

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$0.474

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$0.474

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Northwest PG Solutions

USA . 859 parts In-Stock

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859

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Overview

Experience the superior quality and reliability of the BU941 Power Bipolar Junction Transistor by STMicroelectronics. With its NPN configuration, Darlington design, and built-in diode and resistor, this transistor is ideal for switching applications. Offering a maximum collector-emitter voltage of 400V and a minimum DC current gain of 300, this product delivers exceptional performance and efficiency. Trust STMicroelectronics to provide you with cutting-edge technology that meets your needs and exceeds your expectations. Elevate your projects with the BU941 and unlock a world of possibilities.

Feature Benefit Bullets

Package Body Material: METAL

Metal package provides good thermal conductivity, ensuring efficient heat dissipation, making it suitable for high power applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering high efficiency and fast switching speed.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Darlington configuration provides high current gain, while the built-in diode and resistor simplify circuit design and save space.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance and efficient operation.

Maximum VCEsat: 2 V

Low VCEsat minimizes power dissipation and improves efficiency, making this transistor suitable for high power applications.

Package Shape: ROUND

Round package shape allows for easy mounting and installation in various types of equipment.

Maximum Power Dissipation (Abs): 180 W

High power dissipation capability allows for handling large currents and voltages without the risk of overheating.

Terminal Form: PIN/PEG

Pin/peg terminal form provides easy connection and secure attachment in circuits, ensuring reliable performance.

Minimum DC Current Gain (hFE): 300

High DC current gain ensures efficient amplification and switching capabilities in various applications.

Maximum Operating Temperature: 200 °C

High operating temperature range allows for reliable performance in harsh environments and industrial applications.

Maximum Collector-Emitter Voltage: 400 V

High collector-emitter voltage rating allows for handling high voltages and ensures reliable operation in demanding conditions.

Maximum Collector Current (IC): 15 A

High collector current rating enables the transistor to handle large currents, making it suitable for high power applications.

Terminal Finish: Matte Tin (Sn)

Matte tin finish provides excellent solderability and corrosion resistance, ensuring long-term reliability in various environments.

Terminal Position: BOTTOM

Bottom terminal position allows for easy installation and connection in circuits, ensuring efficient operation and secure mounting.

Case Connection: COLLECTOR

Collector case connection simplifies circuit design and enhances thermal performance, ensuring reliable operation in high power applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BU941 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Minimum DC Current Gain (hFE):

300

JEDEC-95 Code:

TO-3

JESD-30 Code:

O-MBFM-P2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

180 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

2 V

Trade Compliance

BU941 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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