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BU941SM

STMicroelectronics

BU941SM by STMicroelectronics

BU941SM by STMicroelectronics is a powerful NPN Darlington BJT designed for switching applications. It features a max power dissipation of 150W, a collector-emitter voltage of 400V, and operates up to 175 °C. Its compact surface mount design ensures efficient performance in various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,607 parts In-Stock

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2,607

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Vyrian

USA . 2,582 parts In-Stock

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2,582

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Anansix

USA . 2,180 parts In-Stock

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2,180

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 814 parts In-Stock

1+ parts

$0.954

100+ parts

-

1k+ parts

$0.859

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814

$0.954

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$0.859

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MKK Technologies

India . 2,056 parts In-Stock

1+ parts

$1.794

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2,056

$1.794

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DigiPath Technology Company

USA . 2,056 parts In-Stock

1+ parts

$1.794

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2,056

$1.794

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Native Components

USA . 961 parts In-Stock

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961

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Parana Technologies

USA . 798 parts In-Stock

1+ parts

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100+ parts

$1.141

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798

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$1.141

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Northwest PG Solutions

USA . 435 parts In-Stock

1+ parts

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435

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Corphita

USA . 402 parts In-Stock

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402

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Overview

Unlock superior performance with the BU941SM from STMicroelectronics, a powerhouse in power transistors. This NPN Darlington configuration, featuring an integrated diode and resistor, ensures robust switching capabilities tailored for high-demand applications. With exceptional thermal stability and impressive current gain, it’s designed to enhance efficiency and reliability in your projects. Trust in STMicroelectronics’ legacy of innovation to elevate your designs and drive success.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and resistance to environmental factors, making the product reliable in various applications.

Polarity or Channel Type: NPN

As an NPN transistor, it allows for efficient switching and amplification of signals, making it suitable for a wide range of electronic applications.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration provides high current gain, while the built-in diode and resistor enhance the circuit's performance and protection, simplifying design.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can handle fast switching, making it ideal for power control and electronic switching devices.

Surface Mount: YES

The surface mount capability allows for compact designs, reducing space requirements on circuit boards and enabling automated assembly processes.

Package Shape: RECTANGULAR

A rectangular package shape optimizes space utilization on PCB and can be easily integrated into various layouts.

Terminal Form: GULL WING

Gull wing terminal form ensures strong mechanical and electrical connections while facilitating easy soldering during assembly.

No. of Terminals: 10

With 10 terminals, this product allows for versatile connectivity options, supporting a variety of circuit configurations and functionalities.

Maximum Power Dissipation (Abs): 150 W

A maximum power dissipation of 150 W means this transistor can handle significant power loads, ideal for high-performance applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style is beneficial for space-constrained applications, making it suitable for modern compact electronic devices.

Minimum DC Current Gain (hFE): 300

A minimum DC current gain of 300 indicates high efficiency in signal amplification, ensuring better performance in circuit designs.

Maximum Operating Temperature: 175 °C

With a maximum operating temperature of 175 °C, this transistor can function effectively in high-temperature environments, increasing reliability.

Maximum Collector-Emitter Voltage: 400 V

The ability to handle up to 400 V enables this transistor to be used in high-voltage applications, enhancing its versatility.

Transistor Element Material: SILICON

Silicon as the transistor element material offers excellent thermal stability and performance, making it a standard choice in modern electronics.

Maximum Collector Current (IC): 15 A

A maximum collector current of 15 A allows this transistor to support substantial load currents, beneficial for power applications.

Terminal Position: DUAL

With dual terminal positioning, this transistor provides design flexibility and simplifies routing on PCB layouts.

Case Connection: COLLECTOR

The collector case connection facilitates straightforward integration into circuits, optimizing performance and minimizing connection complexity.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BU941SM attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Minimum DC Current Gain (hFE):

300

JESD-30 Code:

R-PDSO-G10

No. of Elements:

1

No. of Terminals:

10

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BU941SM Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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