Loading...

BU941TFI

STMicroelectronics

BU941TFI by STMicroelectronics

STMicroelectronics' BU941TFI is a NPN BJT transistor with Darlington configuration, ideal for switching applications. It features 1.8V VCEsat, 55W power dissipation, and 400V collector-emitter voltage. The package is rectangular with through-hole terminals and matte tin finish, suitable for flange mount installations.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,740 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,740

-

-

-

-

Vyrian

USA . 2,736 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,736

-

-

-

-

Anansix

USA . 1,340 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,340

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 312 parts In-Stock

1+ parts

$0.678

100+ parts

-

1k+ parts

$0.610

10k+ parts

-

312

$0.678

-

$0.610

-

MKK Technologies

India . 2,164 parts In-Stock

1+ parts

$1.275

100+ parts

-

1k+ parts

-

10k+ parts

-

2,164

$1.275

-

-

-

DigiPath Technology Company

USA . 2,164 parts In-Stock

1+ parts

$1.275

100+ parts

-

1k+ parts

-

10k+ parts

-

2,164

$1.275

-

-

-

Parana Technologies

USA . 2,332 parts In-Stock

1+ parts

-

100+ parts

$0.811

1k+ parts

-

10k+ parts

-

2,332

-

$0.811

-

-

Native Components

USA . 812 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

812

-

-

-

-

Corphita

USA . 607 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

607

-

-

-

-

Northwest PG Solutions

USA . 590 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

590

-

-

-

-

Overview

Unleash the power of STMicroelectronics with the BU941TFI Power Bipolar Junction Transistor. Designed for high-performance switching applications, this NPN transistor offers a maximum collector-emitter voltage of 400V and a DC current gain of 300. With a maximum power dissipation of 55W, this Darlington configuration transistor is built to handle tough tasks with ease. The package shape is rectangular and features a flange mount style, making it easy to integrate into your projects. Trust in the quality and reliability of STMicroelectronics for all your power transistor needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications, ensuring compatibility with a wide range of circuits.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration offers high current gain, while the built-in diode and resistor provide additional functionality and convenience in circuit design.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in circuits that require rapid switching between on and off states.

Maximum VCEsat: 1.8 V

Low VCEsat minimizes power loss and heat dissipation, contributing to efficient operation of the transistor.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy mounting and integration into circuit designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure and stable connections, ensuring reliable operation in various applications.

No. of Terminals: 3

Simple and straightforward 3-terminal design for easy integration into circuit designs.

Maximum Power Dissipation (Abs): 55 W

High power dissipation rating allows the transistor to handle high power loads without overheating or damage.

Package Style (Meter): FLANGE MOUNT

Flange mount package style provides mechanical stability and ease of mounting in different applications.

Maximum Power Dissipation Ambient: 55 W

Can effectively dissipate heat in various ambient conditions, ensuring reliable performance under different temperature conditions.

Minimum DC Current Gain (hFE): 300

High DC current gain ensures efficient amplification of input signals, making the transistor suitable for a wide range of applications.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, the transistor can withstand elevated temperature conditions without compromising performance.

Maximum Collector-Emitter Voltage: 400 V

High collector-emitter voltage rating allows the transistor to handle high voltage levels safely and reliably.

Transistor Element Material: SILICON

Silicon material ensures high performance and reliability in various operating conditions.

Maximum Collector Current (IC): 15 A

High collector current rating allows the transistor to handle high current loads without damage or performance degradation.

Terminal Finish: MATTE TIN

Matte tin finish provides corrosion resistance and ensures reliable electrical connections.

Terminal Position: SINGLE

Single terminal position simplifies the installation and connection process, making it user-friendly for circuit integration.

Case Connection: ISOLATED

Isolated case connection allows for better thermal management and prevents electrical interference, enhancing the overall reliability of the transistor.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BU941TFI attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Minimum DC Current Gain (hFE):

300

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

55 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

1.8 V

Trade Compliance

BU941TFI Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 13