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BU941ZTFP

STMicroelectronics

BU941ZTFP by STMicroelectronics

BU941ZTFP by STMicroelectronics is a NPN Power BJT with 55W power dissipation, ideal for amplifier applications. Featuring a Darlington configuration, it has a max collector-emitter voltage of 350V and max collector current of 15A. The package style is flange mount with matte tin terminal finish.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,560 parts In-Stock

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4,560

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Digiode

USA . 3,463 parts In-Stock

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3,463

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Anansix

USA . 724 parts In-Stock

1+ parts

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724

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VNN

France . 100 parts In-Stock

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100

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Nova Conductors

Japan . 17 parts In-Stock

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17

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,032 parts In-Stock

1+ parts

$1.348

100+ parts

-

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$1.213

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1,032

$1.348

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$1.213

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MKK Technologies

India . 181 parts In-Stock

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$2.534

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181

$2.534

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DigiPath Technology Company

USA . 181 parts In-Stock

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$2.534

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181

$2.534

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AZTECH Wire

Italy . 412 parts In-Stock

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$12.659

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412

$12.659

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Ampacity Inc.

Singapore . 307 parts In-Stock

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$25.050

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307

$25.050

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Component Stockers USA

USA . 705 parts In-Stock

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$99.990

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705

$99.990

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Corphita

USA . 527 parts In-Stock

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527

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Parana Technologies

USA . 257 parts In-Stock

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$1.612

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$1.612

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Aranea Global

USA . 100 parts In-Stock

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100

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Overview

Unleash the power of innovation with the BU941ZTFP by STMicroelectronics. Crafted with precision and expertise, this Power Bipolar Junction Transistor is designed to amplify performance in a wide range of applications. With a maximum power dissipation of 55W and a minimum DC current gain of 300, this NPN transistor offers unmatched reliability and efficiency. Whether you're looking to enhance your amplifier circuits or drive motors with precision, the BU941ZTFP is the perfect choice for your next project. Upgrade to excellence today and experience the difference that STMicroelectronics can bring to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications and environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits and are versatile in different electronic applications.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The built-in diode and resistor offer added functionality and convenience in circuit design, reducing the need for external components.

Transistor Application: AMPLIFIER

Designed specifically for amplification purposes, ensuring high performance and efficiency in audio or signal amplification.

Maximum Power Dissipation (Abs): 55 W

Capable of handling high power dissipation, making it suitable for applications that require efficient power management.

Maximum Collector-Emitter Voltage: 350 V

Supports high voltage applications, providing versatility in circuit design and compatibility with various voltage requirements.

Maximum Collector Current (IC): 15 A

Allows for high current handling capacity, making it suitable for applications that require significant current flow.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BU941ZTFP attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

350 V

Minimum DC Current Gain (hFE):

300

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BU941ZTFP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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