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BU941ZTFI

STMicroelectronics

BU941ZTFI by STMicroelectronics

STMicroelectronics' BU941ZTFI is a NPN power BJT with Darlington configuration, ideal for switching applications. It offers a max VCEsat of 1.8V, hFE of 300, and can handle up to 15A collector current. With a max operating temperature of 150 °C and VCE of 350V, it's suitable for high-power applications in various industries.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,930 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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3,930

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-

-

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Vyrian

USA . 3,063 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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3,063

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-

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Anansix

USA . 749 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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749

-

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 698 parts In-Stock

1+ parts

$0.145

100+ parts

-

1k+ parts

-

10k+ parts

$0.139

698

$0.145

-

-

$0.139

Northwest PG Solutions

USA . 1,350 parts In-Stock

1+ parts

$0.159

100+ parts

-

1k+ parts

-

10k+ parts

$0.141

1,350

$0.159

-

-

$0.141

IDEA Electronic Components Group

UK . 1,191 parts In-Stock

1+ parts

$0.516

100+ parts

-

1k+ parts

$0.465

10k+ parts

-

1,191

$0.516

-

$0.465

-

MKK Technologies

India . 1,926 parts In-Stock

1+ parts

$0.971

100+ parts

-

1k+ parts

-

10k+ parts

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1,926

$0.971

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-

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DigiPath Technology Company

USA . 1,926 parts In-Stock

1+ parts

$0.971

100+ parts

-

1k+ parts

-

10k+ parts

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1,926

$0.971

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-

-

Corphita

USA . 2,918 parts In-Stock

1+ parts

-

100+ parts

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2,918

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-

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Parana Technologies

USA . 2,053 parts In-Stock

1+ parts

-

100+ parts

$0.617

1k+ parts

-

10k+ parts

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2,053

-

$0.617

-

-

Overview

Elevate your electronic projects with the BU941ZTFI by STMicroelectronics. Designed and manufactured with precision, this Power BJT transistor offers unmatched quality and reliability. Ideal for switching applications, this NPN Darlington transistor comes with a built-in diode and resistor, providing convenience and efficiency. With a maximum power dissipation of 55W and a collector current of 15A, this transistor is a powerhouse in a compact rectangular package. Trust STMicroelectronics to deliver cutting-edge technology that meets your power needs effortlessly. Experience the difference with the BU941ZTFI - where quality, performance, and value converge.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring reliability and longevity.

Polarity or Channel Type: NPN

Suitable for use in a wide range of applications and circuits.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Offers convenience and saves space by combining multiple components into one package.

Transistor Application: SWITCHING

Ideal for applications that require fast switching speeds and high efficiency.

Maximum VCEsat: 1.8 V

Low saturation voltage helps reduce power dissipation and increase efficiency.

Package Shape: RECTANGULAR

Easy to mount and integrate into various electronic devices and circuits.

Terminal Form: THROUGH-HOLE

Simplifies installation and soldering onto circuit boards.

No. of Terminals: 3

Simplifies circuit design and reduces complexity.

Maximum Power Dissipation (Abs): 55 W

Capable of handling high power levels, suitable for demanding applications.

Package Style (Meter): FLANGE MOUNT

Provides mechanical support and stability when mounted onto a heat sink.

Maximum Power Dissipation Ambient: 55 W

Can operate effectively in various environmental conditions without overheating.

Minimum DC Current Gain (hFE): 300

Ensures consistent and reliable performance in amplification applications.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures without compromising functionality.

Maximum Collector-Emitter Voltage: 350 V

Suitable for high voltage applications where reliability is crucial.

Transistor Element Material: SILICON

Provides good thermal conductivity and reliability for long-term performance.

Maximum Collector Current (IC): 15 A

Suitable for high current applications, ensuring reliable operation under load.

Terminal Finish: MATTE TIN

Provides good conductivity and solderability for a secure connection.

Terminal Position: SINGLE

Simplifies installation and reduces the risk of circuit errors.

Case Connection: ISOLATED

Prevents electrical interference and ensures stable operation in complex circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BU941ZTFI attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

350 V

Minimum DC Current Gain (hFE):

300

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

55 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

1.8 V

Trade Compliance

BU941ZTFI Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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