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ESM3030DV

STMicroelectronics

ESM3030DV by STMicroelectronics

ESM3030DV by STMicroelectronics is a NPN power bipolar junction transistor (BJT) with a max VCEsat of 2.2V and max collector current (IC) of 100A. It is commonly used for switching applications due to its built-in diode and fast fall time of 600ns.

Median Price

$85.782

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

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Ozdisan Elektronik

Türkiye . 34 parts In-Stock

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$85.782

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Digiode

USA . 4,971 parts In-Stock

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Vyrian

USA . 3,444 parts In-Stock

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Anansix

USA . 1,157 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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Pegasus Components GmbH

Germany . 10 parts In-Stock

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LittleDiode

UK . 9 parts In-Stock

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A&K Electronics

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Rotakorn

Sweden . 3 parts In-Stock

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Bristol Electronics

USA . 3 parts In-Stock

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Prism Electronics

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Sinequanon

UK . 2 parts In-Stock

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Tech-Mark Corp

USA . 1 parts In-Stock

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IDEA Electronic Components Group

UK . 462 parts In-Stock

1+ parts

$0.442

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$0.397

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462

$0.442

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$0.397

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Corohmni

South Africa . 557 parts In-Stock

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$0.558

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557

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MKK Technologies

India . 590 parts In-Stock

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$0.830

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590

$0.830

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DigiPath Technology Company

USA . 590 parts In-Stock

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$0.830

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$0.830

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Advanced Electronics

New Zealand . 350 parts In-Stock

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$1.612

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$1.467

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$1.322

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350

$1.612

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$1.322

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Aztec Data Supply Inc.

USA . 191 parts In-Stock

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$1.699

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191

$1.699

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Ampacity Inc.

Singapore . 896 parts In-Stock

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$6.050

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AZTECH Wire

Italy . 317 parts In-Stock

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$15.557

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Continental Prestige Electronics

USA . 6,703 parts In-Stock

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Perfect Parts

USA . 5,666 parts In-Stock

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Alle Elektronik GmbH

Germany . 5,243 parts In-Stock

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Parana Technologies

USA . 2,060 parts In-Stock

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$0.528

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Corphita

USA . 1,338 parts In-Stock

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Argo Parts USA

USA . 359 parts In-Stock

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Aranea Global

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Authorized Procurement Solutions

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Assy Fe

Spain . 4 parts In-Stock

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Overview

The ESM3030DV by STMicroelectronics is a high-quality power bipolar junction transistor (BJT) that offers exceptional performance and reliability. As a leading manufacturer in the industry, STMicroelectronics is known for its commitment to excellence and innovation. The ESM3030DV is designed for switching applications, providing efficient and reliable operation. With a maximum VCEsat of 2.2V and a maximum collector current of 100A, this transistor delivers impressive power and performance. Its rectangular package shape and flange mount style make it easy to integrate into various systems. Whether you need to control motors, lights, or other electronics, the ESM3030DV is the perfect choice. Trust in STMicroelectronics and experience the value and benefits this product brings to your projects.

Feature Benefit Bullets

Polarity or Channel Type:

NPN - This makes the product compatible with NPN transistor circuits, expanding its range of applications.

Configuration:

Darlington with Built-in Diode - The built-in diode simplifies circuit design and enhances its switching capabilities.

Transistor Application:

Switching - Designed specifically for switching applications, making it highly efficient in controlling power flow.

Maximum VCEsat:

2.2 V - Low VCEsat minimizes power loss, ensuring high performance and efficiency.

Package Shape:

Rectangular - The rectangular shape allows for easy integration and compact design in various electronic systems.

No. of Elements:

1 - The single-element construction ensures simplicity in circuitry and ease of use.

Maximum Fall Time (tf):

600 ns - The fast fall time enables quick switching transitions, improving overall performance.

No. of Terminals:

4 - The four terminals provide flexibility in connecting with external circuitry.

Maximum Power Dissipation (Abs):

225 W - High power dissipation capacity guarantees reliability and stability even in demanding applications.

Package Style (Meter):

Flange Mount - The flange mount design offers secure and robust mechanical installation.

Maximum Power Dissipation Ambient:

225 W - The ability to handle high power dissipation in different ambient conditions enhances product durability.

Maximum Operating Temperature:

150 °C - The high maximum operating temperature allows for operation in harsh environments.

Maximum Collector-Emitter Voltage:

300 V - With a high voltage rating, it can be used in a wide range of applications requiring higher voltage capabilities.

Transistor Element Material:

Silicon - Silicon transistors provide excellent performance and reliability, making them a popular choice in the industry.

Maximum Collector Current (IC):

100 A - The high collector current rating allows for efficient control of large currents in various applications.

Terminal Finish:

Nickel - The nickel finish ensures good conductivity and resistance to corrosion.

Terminal Position:

Upper - The upper terminal position facilitates easy connection and integration in electronic circuits.

Case Connection:

Isolated - The isolated case connection offers enhanced safety and protection against electrical interference.

Technical Specifications

Power Bipolar Junction Transistors (BJT) ESM3030DV attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Maximum Fall Time (tf):

600 ns

JESD-30 Code:

R-XUFM-X4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

225 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Power

Surface Mount:

NO

Terminal Finish:

NICKEL

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

2.2 V

Trade Compliance

ESM3030DV Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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